S9014
TRANSI STOR (NPN)
MARKING:
Equivalent Circuit:
SOT-23
1.BASE
2.EMITTER
3.COLLECTOR
FEATURES:
※ Complimentary to S9015
※ Collector Current: Ic=100mA
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
100
mA
Collector Power Dissipation
PC
200
mW
RΘJA
625
℃/W
Junction Temperature
Tj
150
℃
Storage Temperature
Tstg
-55~+150
℃
Thermal Resistance From Junction To Ambient
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S9014
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test Condition
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA, IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 0.1mA, IB=0
45
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB= 50 V , IE=0
0.1
μA
Collector cut-off current
ICEO
VCB= 35V , IE=0
1
μA
Emitter cut-off current
IEBO
VEB= 6V , IC=0
0.1
μA
DC current gain
hFE
VCE=5V, IC= 1mA
Collector-emitter saturation voltage
VCE(sat)
IC=100 mA, IB= 5mA
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=100 mA, IB= 5mA
1
V
fT
VCE=6V, IC= 20mA
f=30MHz
Transition frequency
300
150
400
MHz
CLASSIFICATION OF hFE
Range
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300-400
PAGE 2
S9014
TYPICAL ELEC TRICAL AND THERMAL CHARACTERISTICS
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PAGE 3
S9014
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PAGE 4
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