MMBT5401

MMBT5401 SOT-23 PNP Transistors 3 2 Features 1 High Voltage Transistors 1.Base 2.Emitter 3.Collector ■ Simplified outline(SOT-23) Pb-Free Packages are Available Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Un i t Collector-base v oltage VCBO -160 V Collector-emitter v oltage VCEO -150 V Emitter-base voltage VEBO -5 V Collector current-continuous IC -0.6 A Collector Power Dissipation Pc 300 mW TJ, Tstg -55 to +150 Junction and storage temperature Electrical Characteristics Ta = 25 Parameter Symbol Testconditions Collector-base breakdown voltage VCBO IC = -100 Collector-emitter breakdown voltage * VCEO IC =- 1.0 mA, IB = 0 A, IE = 0 Min Typ Max Unit -160 V -150 V -5 V Emitter-base breakdown voltage VEBO IE = -10 Collector cutoff current ICBO VCB =- 120 V, IE = 0 -0.1 A Emitter cutoff current IEBO VEB = -4.0 V, IC = 0 -0.1 A IC = -1.0 mA, VCE = -5 V 80 DC current gain * hFE IC = -10 mA, VCE = -5 V 100 IC = -50 mA, VCE = -5 V 50 A, IC = 0 300 Collector-emitter saturation voltage * VCE(sat) IC = -50 mA, IB = -5.0 mA -0.5 V Base-emitter saturation voltage * VBE(sat) IC = -50 mA, IB = -5.0 mA -1.0 V Transiston frequency * Pulse Test: Pulse Width = 300 fT VCE=-5V,IC=-10mA,f=30MHz 100 MHz s, Duty Cycle=2.0%. ■ Classification of hfe(2) Type MMBT5401 MMBT5401-L MMBT5401-H Range 100-300 100-200 200-300 Marking www.yfwdiode.com 2L 1/3 Dongguan YFW Electronics Co, Ltd. MMBT5401 SOT-23 Typical Characteristics Static Characteristic -20 COMMON EMITTER Ta=25℃ -90uA -70uA 200 -12 -60uA -50uA -8 -40uA -6 -4 50 -20uA IB=-10uA -0 -3 -6 VCE -0.6 Ta=100℃ -0.2 -0.0 -0.1 -1 -10 IC Ta=25℃ -1 (mA) -10 Cob / Cib 100 VCE=-5V -600 -100 COLLECTOR CURRENT (mA) IC —— VCB / VEB f=1MHz IE=0 / IC=0 IC (mA) o (pF) Ta=25 C Cib C -10 o Ta=100 C CAPACITANCE COLLECTOR CURRENT IC -0.1 IC —— V BE -100 (mA) Ta=100℃ -0.01 -0.1 -600 -100 COLLECTOR CURRENT VCEsat —— -600 -100 IC β=10 Ta=25℃ -0.4 -10 COLLECTOR CURRENT -1 β=10 -0.8 -1 (V) VBEsat —— IC -1.0 Ta=25℃ -1 -0.1 -0.0 -0.2 -0.4 -0.6 -0.8 fT —— IC -10 Pc 0.4 fT 200 150 100 50 —— V (V) Ta 0.3 0.2 0.1 VCE=-5V o Ta=25 C -0 -5 -10 -15 COLLECTOR CURRENT www.yfwdiode.com -1 REVERSE VOLTAGE 250 0 Cob 1 -0.5 -1.0 COLLECTOR POWER DISSIPATION Pc (W) 300 10 VBE(V) BASE-EMITTER VOLTAGE (MHz) 0 -9 COLLECTOR-EMITTER VOLTAGE TRANSITION FREQUENCY o Ta=25 C 100 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -0 150 -30uA -2 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) hFE -80uA -10 VCE=-5V o Ta=100 C 250 DC CURRENT GAIN (mA) -14 COLLECTOR CURRENT -16 IC -18 hFE —— IC 300 -100uA -20 IC -25 0.0 -30 0 25 50 75 AMBIENT TEMPERATURE (mA) 2/3 100 Ta 125 150 (℃ ) Dongguan YFW Electronics Co, Ltd. MMBT5401 SOT-23 SOT-23 Package Outline D E B A X HE v M A 3 Q A A1 1 2 e1 c bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 Summary of Packing Options Package SOT-23 www.yfwdiode.com Packing Description Packing Quantity Industry Standard Tape/Reel,7”reel 3000 EIA-481-1 3/3 Dongguan YFW Electronics Co, Ltd.