S8050

S8050 SOT-23 NPN Transistors 3 2 Features 1.Base 2.Emitter 3.Collector 1 ■ Simplified outline(SOT-23) Collector Current: IC=0.5A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 0.5 A Collector Dissipation PC 0.3 W Junction Temperature Tj 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditi ons Collector-base breakdown voltage VCBO IC = 100 u A, I Collector-emitter breakdown voltage VCEO =0 Max Unit IC = 1mA , IB = 0 25 V 5 Emitter-base Breakdown voltage VEBO IE = 100 u A, I ICBO VCB = 40 V , IE = 0 Collector-emitter cut-off current ICEO Emitter-base cut-off current IEBO hFE Typ V Collector-base cut-off current DC current gain Min 40 E C =0 V 0.1 A VCE = 20 V , IB = 0 1 A VEB = 5 V , IC = 0 0.1 A VCE = 1 V , IC = 50 mA 120 VCE = 1 V , IC = 500 mA 50 400 Collector-emitter saturation voltage VCE(sat) IC = 500 mA , IB = 50 mA 0.6 V Base-emitter saturation voltage VBE(sat) IC = 500 mA , IB = 50 mA 1.2 V Transition frequency fT VCE = 6 V , IC = 20 mA , f = 30 MHz 150 MHz ■ Classification of hfe(1) Type Range Marking www.yfwdiode.com S8050 200-350 S8050-L S8050-H S8050-J 120-200 144-202 300-400 J3Y 1/3 Dongguan YFW Electronics Co, Ltd. S8050 SOT-23 Typical Characteristics Static Characteristic 100 COLLECTOR CURRENT 60 hFE 250uA 200uA 40 150uA IC Ta=100℃ Ta=25℃ DC CURRENT GAIN 300uA IC (mA) 350uA —— COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ 400uA 80 hFE 1000 100 100uA 20 IB=50uA 0 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat —— 1 3 10 IC VBEsat 1.2 IC (mA) IC —— 300 100 Ta=100℃ Ta=25℃ 30 10 3 10 30 IC 500 IC Ta=100℃ 0.4 0.0 500 100 Ta=25℃ 0.8 β=10 β=10 1 COLLECTOR CURRENT 1 3 30 10 (mA) 100 COLLECTOR CURRENT —— VBE Cob/ Cib 100 —— IC VCB/ VEB f=1MHz IE=0/ IC=0 100 Ta=25℃ Cib (pF) 30 30 C Ta=25℃ 10 Ta=100℃ CAPACITANCE (mA) IC COLLECTOR CURRENT 500 (mA) COMMON EMITTER VCE=1V 3 1 Cob 10 3 0.3 0.1 0.2 0.4 0.6 0.8 1 0.1 1.0 fT 1000 1 0.3 —— IC PC —— 400 VCE=6V 10 3 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) V 20 (V) Ta COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ fT TRANSITION FREQUENCY 500 100 30 COLLECTOR CURRENT (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 500 VCE 10 20 100 10 10 www.yfwdiode.com 100 30 COLLECTOR CURRENT IC 300 200 100 0 0 (mA) 25 50 75 100 AMBIENT TEMPERATURE 2/3 Ta 125 150 (℃) Dongguan YFW Electronics Co, Ltd. S8050 SOT-23 SOT-23 Package Outline D E B A X HE v M A 3 Q A A1 1 2 e1 c bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 Summary of Packing Options Package SOT-23 www.yfwdiode.com Packing Description Packing Quantity Industry Standard Tape/Reel,7”reel 3000 EIA-481-1 3/3 Dongguan YFW Electronics Co, Ltd.