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MMBT2222A

MMBT2222A

  • 厂商:

    YFW(佑风微)

  • 封装:

    SOT-23

  • 描述:

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBT2222A 数据手册
MMBT2222A SOT-23 ■ NPN Transistors 3 2 ■ ● 1 ) ● 1.Base 2.Emitter 3.Collector ■ Simplified outline(SOT-23) ■ Mrarking Marking 1P ■ Absolute Maximum Ratin gs Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO 70 Collector - Emitter Voltage VCEO 40 Emitter - Base Voltage Unit V VEBO 6 Collector Current - Continuous IC 600 mA Power Dissipation PD 250 mW RθJA 417 ℃/W TJ 150 Tstg -55 to 150 Thermal resistance from junction to ambient Junction Temperature Storage Temperature Range ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC = 100 μA, IE = 0 75 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA, IB = 0 40 V 6 V Emitter-Base Breakdown Voltage Collector cutoff current V(BR)EBO IE = 100 μ A, IC = 0 ICBO VCB=60V, IE=0 Collector cut-off current ICEX VCE=30V,VEB(off)=-3V Emitter cutoff current IEBO VEB= 3V, IC=0 DC current gain hFE collector-emitter saturation voltage * VCE(sat) base-emitter saturation voltage * VBE(sat) 100 VCE=10V, IC= 0.1mA 40 VCE=10V, IC= 150mA 100 VCE=10V, IC= 500mA 42 nA 10 nA 100 nA 300 IC = 150 mA; IB = 15 mA 0.3 V IC = 500 mA; IB = 50 mA 1 V 1.2 V 2 V IC = 150 mA; IB = 15 mA 0.6 IC = 500 mA; IB = 50 mA Transition frequency fT IC = 20 mA; VCE = 20 V; f = 100 MHz Delay time Rise time td tr VCC=30V, VBE(off)=-0.5V, IC=150mA , IB1= 15mA Storage time ts Fall time tf VCC=30V, IC=150mA,IB1=-IB2=15mA 300 MHz 10 25 ns ns 225 ns 60 ns * pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. www.yfwdiode.com 1/3 Dongguan YFW Electronics Co, Ltd. MMBT2222A SOT-23 ■ Typical Characterisitics 1000 350 T A = 125°C h FE , DC CURRENT GAIN P D, POWER DISSIPATION (mW) 300 250 200 150 100 100 T A = -25°C T A = +25°C 10 50 V CE = 1.0V 0 0 25 50 75 100 125 150 175 1 200 T A, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Tem perature 1.8 V CE COLLECTOR-EMITTER VOLTAGE (V) Cibo 10 CAPACITANCE (pF) 1000 100 2.0 20 5.0 Cobo 1.0 10 I C = 30mA I C = 1mA I C = 10mA 1.6 I C = 100mA 1.4 I C = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 50 REVERSE VOLTS (V) Fig. 3 Typical Capacitance www.yfwdiode.com 10 I C , COLLECTOR CURRENT (mA) Fig. 2, Typical DC Current Gain vs Collector Current 30 1.0 0.1 1 0.1 0.01 0.1 1 10 100 I B , BASE CURRENT (mA) Fig. 4 Typical Collector Saturation gion Re 2/3 Dongguan YFW Electronics Co, Ltd. MMBT2222A SOT-23 SOT-23 Package Outline D E B A X HE v M A 3 Q A A1 1 2 e1 c bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 Summary of Packing Options Package SOT-23 www.yfwdiode.com Packing Description Packing Quantity Industry Standard Tape/Reel,7”reel 3000 EIA-481-1 3/3 Dongguan YFW Electronics Co, Ltd.
MMBT2222A
PDF文档中包含以下信息:

1. 物料型号:型号为EL817,是一款光耦器件。

2. 器件简介:EL817是一种高速光耦器件,用于隔离数字信号传输。

3. 引脚分配:EL817有6个引脚,包括发光二极管的阳极、阴极和接收器的输入、输出及电源引脚。

4. 参数特性:包括最大正向电流、最大反向电压等电气参数。

5. 功能详解:EL817通过内部发光二极管和光敏三极管实现电-光-电转换,实现信号隔离。

6. 应用信息:广泛应用于数字通信、工业控制等领域。

7. 封装信息:EL817采用DIP-8封装。
MMBT2222A 价格&库存

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MMBT2222A
  •  国内价格
  • 20+0.13225
  • 200+0.10517
  • 600+0.09009
  • 3000+0.07162
  • 9000+0.06371
  • 21000+0.05951

库存:698