MMBT3904 SOT-23
NPN Transistors
3
2
Features
1
● Complementary to MMBT3906
1.Base
2.Emitter
3.Collector
■ Simplified outline(SOT-23)
● Marking:1AM
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector - Base Voltage
Parameter
VCBO
60
V
Collector - Emitter Voltage
VCEO
40
V
Emitter - Base Voltage
VEBO
6
V
Collector Current - Continuous
IC
0.2
A
Collector Power Dissipation
PC
0.2
W
Junction Temperature
TJ
150
Storage Temperature
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Conditions
Min
Collector-base breakdown voltage
VCBO
Ic= 100 μA, IE= 0
60
Collector- emitter breakdown voltage
VCEO
Ic= 1 mA, IB= 0
40
6
Typ
Max
V
Emitter - base breakdown voltage
VEBO
IE= 100μA, IC= 0
Collector-base cut-off current
ICBO
VCB= 60 V , IE= 0
100
Collector- emitter cut-off current
ICEX
VCE= 30 V , VEB(off)=- 3V
50
Emitter cut-off current
IEBO
VEB= 5V , IC=0
100
IC= 10 mA, IB= 1mA
0.2
Collector-emitter saturation voltage
VCE(sat)
Base - emitter saturation voltage
VBE(sat)
DC current gain
IC= 50 mA, IB= 5mA
IC= 10 mA, IB= 1mA
0.3
0.65
IC= 50 mA, IB= 5mA
0.85
VCE= 1V, IC= 10mA
100
hfe(2)
VCE= 1V, IC= 50mA
60
hfe(3)
VCE= 1V, IC= 100mA
30
VCC= 3V, VBE(off)=- 0.5V
Rise time
tr
IC= 10mA, IB1= 1mA
35
Storage time
ts
VCC= 3V, IC= 10mA
200
35
tf
IB1=IB2= 1mA
50
Collector input capacitance
Cib
VEB= 0.5V, IE= 0,f=1MHz
8
Collector output capacitance
Cob
VCB= 5V, IE= 0,f=1MHz
4
fT
VCE= 20V, IC= 10mA,f=100MHz
V
400
td
Transition frequency
nA
0.95
hfe(1)
Delay time
Fall time
Unit
300
ns
pF
MHz
■ Classification of hfe(1)
Type
MMBT3904
Range
100-300
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MMBT3904-L MMBT3904-H MMBT3904-J
100-200
200-300
300-400
1/3
Dongguan YFW Electronics Co, Ltd.
MMBT3904 SOT-23
Typical Characteristics
Static Characteristic
400uA
350uA
60
DC CURRENT GAIN
COLLECTOR CURRENT
hFE
80
hFE
400
300uA
250uA
200uA
40
150uA
IC
Ta=100℃
300
Ta=25℃
200
100
100uA
20
——
COMMON EMITTER
VCE=1V
COMMON
EMITTER
Ta=25℃
500uA
450uA
IC
(mA)
100
IB=50uA
0
0
4
8
12
16
COLLECTOR-EMITTER VOLTAGE
VCEsat
——
1
0.3
IC
VBEsat
1.2
300
Ta=100℃
100
Ta=25℃
30
30
10
3
COLLECTOR CURRENT
(V)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
600
VCE
0
0.1
20
IC
100
(mA)
IC
——
.
Ta=25℃
0.8
Ta=100℃
0.4
β=10
β=10
10
3
1
30
10
COLLECTOR CURRENT
IC
100
IC
100
0.0
200
1
10
3
(mA)
100
30
COLLECTOR CURRENT
—— VBE
Cob/ Cib
9
——
IC
VCB/ VEB
f=1MHz
IE=0/IC=0
30
Ta=25℃
Cib
C
(pF)
Ta=100℃
CAPACITANCE
COLLECTOR CURRENT
IC
(mA)
COMMON EMITTER
VCE=1V
10
300
(mA)
3
Ta=25℃
1
3
Cob
0.3
0.1
0.2
0.4
0.6
0.8
1.0
1
0.1
1.2
fT
300
——
1
0.3
IC
PC
250
10
3
REVERSE VOLTAGE
BASE-EMMITER VOLTAGE VBE (V)
——
V
20
(V)
Ta
VCE=20V
TRANSITION FREQUENCY
fT
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
Ta=25℃
200
100
1
3
10
COLLECTOR CURRENT
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30
IC
200
150
100
50
0
60
(mA)
0
25
50
75
AMBIENT TEMPERATURE
2/3
100
Ta
125
150
(℃)
Dongguan YFW Electronics Co, Ltd.
MMBT3904 SOT-23
SOT-23
Package Outline
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
c
bp
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
Summary of Packing Options
Package
SOT-23
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Packing Description
Packing Quantity
Industry Standard
Tape/Reel,7”reel
3000
EIA-481-1
3/3
Dongguan YFW Electronics Co, Ltd.