MMBT7002K

MMBT7002K N-Channel Enhancement Mode Field Effect Transistor Features • Low on resistance RDS(ON) • Low gate threshold voltage • Low input capacitance • ESD protected up to 2KV 1.Gate 2.Source 3.Drain SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 C) O Parameter Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ± 20 V Drain Current (Continuous) ID 300 mA Drain Current (Pulse Width ≤ 10 µs) IDM 800 mA Total Power Dissipation Ptot 350 mW Tj, Tstg - 55 to + 150 Operating and Storage Temperature Range C O Characteristics at Ta = 25 C O Parameter Drain Source Breakdown Voltage at ID = 10 µA Zero Gate Voltage Drain Current at VDS = 60 V Gate Source Leakage Current at VGS = ± 20 V Gate Threshold Voltage at VDS = 10 V, ID = 250 µA Static Drain Source On-Resistance at VGS = 10 V, ID = 500 mA at VGS = 4.5 V, ID = 200 mA Forward Transconductance at VDS = 10 V, ID = 200 mA Input Capacitance at VDS = 25 V, f = 1 MHz Output Capacitance at VDS = 25 V, f = 1 MHz Reverse Transfer Capacitance at VDS = 25 V, f = 1 MHz Page 1 of 3 Symbol Min. Max. Unit BVDSS 60 - V IDSS - 1 µA IGSS - ± 10 µA VGS(th) 1 2.5 V RDS(ON) - 3 4 Ω gfs 80 - mS Ciss - 50 pF Coss - 25 pF Crss - 5 pF 6/8/2011 Page 2 of 3 6/8/2011 PACKAGE OUTLINE Plastic surface mounted package; 3 leads Page 3 of 3 SOT-23 6/8/2011