2SD596

2SD596 2SD596 TRANSI STOR (NPN) Equivalent Circuit: SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES: ※ Complimentary to 2SB624 ※ High DC Current gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current IC 700 mA Collector Power Dissipation PC 200 mW RΘJA 625 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55～+150 ℃ Thermal Resistance From Junction To Ambient www.yongyutai.com PAGE 1 2SD596 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=30 V , IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 μA hFE VCE=1V, IC= 100mA 100 hFE VCE=1V, IC= 700mA 50 Collector-emitter saturation voltage VCE(sat) IC=700 mA, IB= 70mA 0.6 V Base-emitter saturation voltage VBE(sat) VCE=6V, IC= 10mA 0.7 V fT VCE=2V, IC= 10mA f=100MHz Cob VCE=10V, IE= 0 f=1MHz 400 DC current gain Transition frequency Collector Output Capacitance 170 MHz 12 pf ※ Pulse test: Pulse width≤350μs,Duty Cycle≤2％ CLASSIFICATION OF hFE MARKING DV1 DV2 DV3 DV4 DV5 Range 110-180 135-220 170-270 200-320 250-400 www.yongyutai.com PAGE 2 2SD596 TYPICAL ELEC TRICAL AND THERMAL CHARACTERISTICS www.yongyutai.com PAGE 3 2SD596 www.yongyutai.com PAGE 4