MMBTA42

MMBTA42 TRANSI STOR (NPN) MARKING: Equivalent Circuit: SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES: ※ Complimentary to MMBTA92 ※ Collector Current: Ic=0.5A ※ High breakdown voltage ※ Low collector-emitter saturation voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 6 V Collector Current IC 500 mA Collector Power Dissipation PC 350 mW RΘJA 416 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55～+150 ℃ Thermal Resistance From Junction To Ambient www.yongyutai.com PAGE 1 MMBTA42 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 300 500 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 300 500 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6 30 V Collector cut-off current ICBO VCB= 300 V , IE=0 0.8 μA Collector cut-off current ICEO VCE= 300V , IE=0 0.8 μA Emitter cut-off current IEBO VEB= 6V , IC=0 1 μA hFE VCE= 10V, IC= 1mA 60 hFE VCE= 10V, IC= 10mA 100 hFE VCE= 10V, IC= 30mA 60 Collector-emitter saturation voltage VCE(sat) IC= 30 mA, IB= 3mA 0.2 V Base-emitter saturation voltage VBE(sat) IC= 30 mA, IB= 3mA 1.2 V fT VCE=20V, IC= 20mA f=30MHz 300 MHz Cod VCB= 10V, IE=0, f=1MHz 10 pF DC current gain Transition frequency Collector Current Capacitance 50 200 CLASSIFICATION OF hFE Rank L Range 100-200 MARKING 1D www.yongyutai.com PAGE 2 MMBTA42 TYPICAL ELEC TRICAL AND THERMAL CHARACTERISTICS www.yongyutai.com PAGE 3 MMBTA42 www.yongyutai.com PAGE 4