APM2315AC-TRG

APM2315A ® P-Channel Enhancement Mode MOSFET Pin Description Features · -20V/-4A, D RDS(ON)=35mW (typ.) @ VGS=-4.5V RDS(ON)=45mW (typ.) @ VGS=-2.5V RDS(ON)=60mW (typ.) @ VGS=-1.8V · · S G Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available S (RoHS Compliant) Applications · G Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems D P-Channel MOSFET Ordering and Marking Information APM2315 Package Code A : SOT-23-3 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (3000ea/reel) Assembly Material G : Halogen and Lead Free Device Assembly Material Handling Code Temperature Range Package Code APM2315 A : 115XX XX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ã Sinopower Semiconductor, Inc. Rev. B.3 - June, 2014 1 www.sinopowersemi.com APM2315A ® Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±12 ID* Continuous Drain Current IDM* Pulsed Drain Current IS* Diode Continuous Forward Current -1.5 TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range PD* Maximum Power Dissipation V -4 VGS=-4.5V A -16 A °C -55 to 150 TA=25°C 0.83 TA=100°C 0.3 Thermal Resistance-Junction to Ambient RqJA* Unit W 150 °C/W 2 Note : *Surface Mounted on 1in pad area, t £ 10sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Conditions APM2315A Unit Min. Typ. Max. -20 - - - - -1 - - -30 -0.5 -0.7 -1 V nA Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) VSD a a VGS=0V, IDS=-250mA VDS=-16V, VGS=0V T J=85°C Gate Threshold Voltage VDS=VGS, IDS=-250mA Gate Leakage Current VGS=±10V, VDS=0V - - ±100 VGS=-4.5V, IDS=-4A - 35 55 VGS=-2.5V, IDS=-2.5A - 45 72 VGS=-1.8V, IDS=-2A - 60 100 ISD=-0.5A, VGS=0V - -0.75 -1.3 - 12 16 - 2.1 - - 2.9 - Drain-Source On-state Resistance Diode Forward Voltage Gate Charge Characteristics V mA mW V b Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge Copyright ã Sinopower Semiconductor, Inc. Rev. B.3 - June, 2014 VDS=-10V, VGS=-4.5V, IDS=-4A 2 nC www.sinopowersemi.com APM2315A ® Electrical Characteristics (Cont.) Symbol Parameter Dynamic Characteristics Test Conditions APM2315A Min. Typ. Max. - 8 - - 1135 - - 200 - - 110 - - 6 12 - 7 14 - 72 131 - 45 82 Unit b RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf (TA = 25°C unless otherwise noted) VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-15V, Frequency=1.0MHz VDD=-10V, RL=10W, IDS=-1A, VGEN=-4.5V, RG=6W Turn-off Fall Time W pF ns Note a : Pulse test ; pulse width£300ms, duty cycle£2%. Note b : Guaranteed by design, not subject to production testing. Copyright ã Sinopower Semiconductor, Inc. Rev. B.3 - June, 2014 3 www.sinopowersemi.com APM2315A ® Typical Operating Characteristics Power Dissipation Drain Current 5.0 0.9 4.5 0.8 4.0 -ID - Drain Current (A) 1.0 Ptot - Power (W) 0.7 0.6 0.5 0.4 0.3 3.5 3.0 2.5 2.0 1.5 1.0 0.2 0.5 0.1 o TA=25 C,VG=-4.5V o 0.0 TA=25 C 0 20 40 60 0.0 80 100 120 140 160 60 80 100 120 140 160 Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance Rd s( on )L im it -ID - Drain Current (A) 40 Tj - Junction Temperature (°C) 300ms 1ms 1 10ms 100ms 0.1 1s DC o TA=25 C 0.01 0.01 20 Tj - Junction Temperature (°C) 30 10 0 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 1E-3 0.01 100 -VDS - Drain - Source Voltage (V) Copyright ã Sinopower Semiconductor, Inc. Rev. B.3 - June, 2014 2 Mounted on 1in pad o RqJA : 150 C/W 0.1 1 10 100 Square Wave Pulse Duration (sec) 4 www.sinopowersemi.com APM2315A ® Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 16 160 VGS= -3,-4,-5,-6,-7,-8,-9,-10V -2V 12 -ID - Drain Current (A) 140 RDS(ON) - On - Resistance (mW) 14 10 8 6 4 -1.5V 2 0 0.0 0.5 1.0 1.5 2.0 2.5 80 VGS= -4.5V 40 20 0 4 8 12 16 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 14 1.6 Normalized Threshold Voltage 1.8 10 8 o 6 Tj=125 C 4 o Tj=-55 C o 0 0.0 VGS= -2.5V 60 16 2 VGS= -1.8V 100 0 3.0 12 -ID - Drain Current (A) 120 Tj=25 C 0.5 1.0 20 IDS = -250mA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 1.5 2.0 2.5 0.0 -50 -25 3.0 -VGS - Gate - Source Voltage (V) Copyright ã Sinopower Semiconductor, Inc. Rev. B.3 - June, 2014 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.sinopowersemi.com APM2315A ® Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 1.8 20 VGS = -4.5V IDS = -4A 10 1.4 -IS - Source Current (A) Normalized On Resistance 1.6 1.2 1.0 0.8 o Tj=150 C o Tj=25 C 1 0.6 o RON@Tj=25 C: 35mW 0.4 -50 -25 0 25 50 0.1 0.0 75 100 125 150 1.2 1.5 Capacitance Gate Charge 10 VDS= -10V 9 -VGS - Gate - source Voltage (V) 1600 1400 C - Capacitance (pF) 0.9 -VSD - Source - Drain Voltage (V) Frequency=1MHz 1200 Ciss 1000 800 600 400 Coss 200 Crss 0 0.6 Tj - Junction Temperature (°C) 1800 0 0.3 4 8 12 16 7 6 5 4 3 2 1 0 5 10 15 20 25 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Copyright ã Sinopower Semiconductor, Inc. Rev. B.3 - June, 2014 8 0 20 ID = -4A 6 www.sinopowersemi.com APM2315A ® Avalanche Test Circuit and Waveforms VDS tAV L DUT EAS VDD RG VDD IAS tp IL VDS 0.01W tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDS RD td(on) tr DUT RG td(off) tf VGS 10% VGS VDD tp 90% VDS Copyright ã Sinopower Semiconductor, Inc. Rev. B.3 - June, 2014 7 www.sinopowersemi.com APM2315A ® Package Information SOT-23-3 D -T- SEATING PLANE < 4 mils e E E1 SEE VIEW A c b 0.25 L GAUGE PLANE SEATING PLANE 0 A1 A A2 e1 VIEW A RECOMMENDED LAND PATTERN SOT-23-3 S Y M B O L MIN. MAX. MIN. MAX. A - 1.20 - 0.047 A1 0.00 0.08 0.000 0.003 A2 0.90 1.12 0.035 0.044 b 0.30 0.50 0.012 0.020 c 0.08 0.22 0.003 0.009 D 2.70 3.10 0.106 0.122 E 2.60 3.00 0.102 0.118 1.80 0.055 0.071 E1 MILLIMETERS 1.40 0.8 INCHES e 0.95 BSC 0.037 BSC e1 1.90 BSC 0.075 BSC L 0.30 0.60 0 0° 8° 0.024 0.012 0° 8° 2.4 0.8 0.95 UNIT: mm Note : Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil per side. Copyright ã Sinopower Semiconductor, Inc. Rev. B.3 - June, 2014 8 www.sinopowersemi.com APM2315A ® Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 B A OD1 B T SECTION A-A SECTION B-B H A d T1 Application A H 178.0±2.00 50 MIN. SOT-23-3 P0 4.0±0.10 P1 4.0±0.10 T1 C d 8.4+2.00 13.0+0.50 1.5 MIN. -0.00 -0.20 P2 2.0±0.05 D0 D1 1.5+0.10 1.0 MIN. -0.00 D 20.2 MIN. T W E1 8.0±0.30 1.75±0.10 A0 B0 F 3.5±0.05 K0 0.6+0.00 3.20±0.20 3.10±0.20 1.50±0.20 -0.40 (mm) Copyright ã Sinopower Semiconductor, Inc. Rev. B.3 - June, 2014 9 www.sinopowersemi.com APM2315A ® Taping Direction Information SOT-23-3 USER DIRECTION OF FEED Classification Profile Copyright ã Sinopower Semiconductor, Inc. Rev. B.3 - June, 2014 10 www.sinopowersemi.com APM2315A ® Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Volume mm Thickness