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ASDM20N12ZB-R

ASDM20N12ZB-R

  • 厂商:

    ASCEND(安森德)

  • 封装:

    SOT-23

  • 描述:

    类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):12A;功率(Pd):1.14W;导通电阻(RDS(on)@Vgs,Id):11.5mΩ@4.5V,5A;阈值电压(Vgs(th)@I...

  • 数据手册
  • 价格&库存
ASDM20N12ZB-R 数据手册
ASDM20N12ZB 20V N-CHANNEL MOSFET Product Summary Features z 20V/12A V DS z Super High Dense Cell Design R DS(on),Typ@ VGS=4.5 V z Reliable and Rugged ID z Lead Free Available (RoHS Compliant) 20 V 11.5 mΩ 12 A Applications z Portable Equipment and Battery Powered Systems. z DC-DC converter z Load Switch Top view D G S SOT-23-3 Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted) 12 48 NOV 2019 Version1.1 1/6 Ascend Semicondutor Co.,Ltd ASDM20N12ZB 20V N-CHANNEL MOSFET Electrical Characteristics (TA=25°C Unless Otherwise Noted) 0.55 NOV 2019 Version1.1 2/6 0.95 5 11.5 12.5 3 15.5 16.5 Ascend Semicondutor Co.,Ltd ASDM20N12ZB 20V N-CHANNEL MOSFET ■ Typical Performance Characteristics NOV 2019 Version1.1 3/6 Ascend Semicondutor Co.,Ltd ASDM20N12ZB 20V N-CHANNEL MOSFET Ordering and Marking Information Ordering Device No. Marking ASDM20N12ZB-R 20N12 Package SOT-23-3 Quantity Tape&Reel 3000/Reel MARKING PACKAGE 20N12 SOT-23-3 NOV 2019 Version1.1 Packing 4/6 Ascend Semicondutor Co.,Ltd ASDM20N12ZB 20V N-CHANNEL MOSFET SOT-23-3 PACKAGE IN FORMATION Symbol Dimensions in Millimeters Min Max Dimensions in Inches Min Max A 0.90 1.15 0.035 0.045 A1 0.00 0.10 0.000 0.004 A2 0.90 1.05 0.035 0.041 b 0.30 0.55 0.012 0.022 C 0.08 0.15 0.003 0.006 D 2.80 3.00 0.110 0.118 E 1.20 1.40 0.047 0.055 0.95 TYP e 0.037 TYP e1 1.80 2.00 0.071 0.079 H 2.25 2.55 0.089 0.100 L 0.30 0.50 0.012 0.020 θ 0∘ 8∘ 0∘ 8∘ NOV 2019 Version1.1 5/6 Ascend Semicondutor Co.,Ltd ASDM20N12ZB 20V N-CHANNEL MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Xi‘an Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Xi‘an Ascend Semiconductor Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Xi‘an Ascend Semiconductor Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume . all risks of such use and will agree to hold Ascendsemi Incorporated and all the companies whose products are represented on Xi‘an Ascend Semiconductor Incorporated website, harmless against all damages. Xi‘an Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Xi‘an Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Xi‘an Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com NOV 2019 Version1.1 6/6 Ascend Semicondutor Co.,Ltd
ASDM20N12ZB-R 价格&库存

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