3402

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3402 TF3402 N-Channel 30-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 0.070Ω@ 10V 3 30V 1.GATE 4.0 A 0.075Ω@ 4.5V 2.SOURCE 0.105 Ω@ 2.5V 3.DRAIN 1 General FEATURE 2 Equivalent Circuit MARKING ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package A22TF w APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter *w：week code Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A TA=25°C Pulsed Drain Current Power Dissipation B A TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient C Maximum Junction-to-Lead www.sztuofeng.com Maximum 30 Units V ±12 V ID 4 A IDM 15 PD 1.25 TJ, TSTG -55 to 150 Symbol A A W t ≤ 10s Steady-State Steady-State RθJA RθJL 1 Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3402 Electrical Characteristics (TJ=25°C unless otherwise noted) Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Parameter ID=250µA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V 1 µA IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V 1 100 1.6 nA V A VGS=10V, ID=4A 65 70 mΩ RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=2.3A 70 75 mΩ 90 8 0.8 105 mΩ gFS VSD VGS=2.5V, ID=1.5A Forward Transconductance VDS=5V, ID=4A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Symbol IS On state drain current 0.8 10 Typ Max Units V S 1.2 2.5 V A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=15V, f=1MHz 390 54.5 pF pF Rg VGS=0V, VDS=0V, f=1MHz 41 3 pF Ω VGS=4.5V, VDS=15V, ID=4A 4.34 0.6 nC nC 1.38 3.3 nC ns 1 21.7 ns ns 2.1 12 6.3 ns Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) Gate Drain Charge Turn-On DelayTime tr tD(off) tf trr Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Qrr VGS=10V, VDS=15V, RL=3.75Ω, RGEN=6Ω IF=4A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs Body Diode Reverse Recovery Time ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. www.sztuofeng.com 2 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 10V 3V 12 8 VDS=5V 4.5V 6 ID(A) ID (A) 9 2.5V 6 4 125°C 3 2 VGS=2V 0 25°C 0 0 1 2 3 4 5 0 0.5 150 1.5 2 2.5 3 3.5 Normalized On-Resistance 1.8 125 VGS=2.5V RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 100 75 VGS=4.5V 50 25 VGS=10V 1.6 VGS=4.5V VGS=10V 1.4 1.2 VGS=2.5V 1 0 0.8 0 2 4 6 8 10 0 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 200 1.0E+01 1.0E+00 ID=2A 1.0E-01 125°C 100 IS (A) RDS(ON) (mΩ) 150 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 50 25°C 1.0E-05 1.0E-06 0 0 2 4 6 8 0.0 10 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage www.sztuofeng.com 0.2 3 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 5 VDS=15V ID=4A 500 Capacitance (pF) VGS (Volts) 4 3 2 1 Ciss 400 300 200 Coss 100 0 0 0 1 2 3 4 5 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 20 TJ(Max)=150°C TA=25°C RDS(ON) limited 15 10µs 100µs Power (W) 10.0 5 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C 100.0 ID (Amps) Crss 1ms 0.1s 10ms 1.0 10 1s 5 10s DC 0.1 0.1 1 10 0 0.001 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance www.sztuofeng.com 4 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3402 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.sztuofeng.com 5 Feb,2018 V1.0