3410

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3410 TF3410 N-Channel 30-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 0.028Ω@ 10V 30V 0.0 33Ω@ 4.5V 3 1.GATE 5.8 A 2.SOURCE 0.042Ω@ 2.5V 1 General FEATURE 3.DRAIN 2 Equivalent Circuit MARKING ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package AA1TF w APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter *w：week code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current*1 ID 5.8 IDM 30 Continuous Source-Drain Diode Current IS 1.0 Maximum Power Dissipation PD 1.4 W R θJA 89 ℃/W Junction Temperature TJ -55 ~+150 Storage Temperature Tstg -55 ~+150 Thermal Resistance from Junction to Ambient(t ≤10 s) V A ℃ Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% www.sztuofeng.com 1 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3410 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max 0.8 1.0 Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID = 250µA 30 Gate-source threshold voltage VGS(th) VDS =VGS, ID = 250µA 0.5 Gate-source leakage IGSS VDS =0V, VGS =±12V ±100 nA Zero gate voltage drain current IDSS VDS =24V, VGS =0V 100 nA Drain-source on-state resistance a RDS(on) Forward transconductance a gf s VGS =10 V , ID =5.8A 0.023 0.028 VGS =4.5V, ID =5A 0. 026 0.033 VGS =2.5V, ID =4A 0.035 0.042 - - VDS =5V, ID =5A 10 V Ω S b Dynamic 825 Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 78 Total gate charge Qg 10 Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) VDS =15V,VGS =0V,f =1MHz VDS =10V,VGS =4.5V ,ID =5.8A 100 pF nC 1.6 3.1 VDD=15V,RL =2.7 Ω VGS =10V ,Rgen =3Ω tf 3.3 4.8 . ns 26.0 4.0 Drain-source body diode characteristics Continuous source-drain diode current Body diode voltage IS TC=25℃ VSD IS=1.0A 2.5 A 1.0 V Feb,2018 V1.0 0.7 Notes : a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b.Guaranteed by design, not subject to production testing. www.sztuofeng.com 2 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3410 Typical Electrical and Thermal Characteristics Vdd Vgs Rgen td(on) Rl Vin D ton tr Vout 90% VOUT G toff tf td(off) 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit . TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(Ω) Figure 3 Power Dissipation ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 5 Output Characteristics www.sztuofeng.com Figure 6 Drain-Source On-Resistance 3 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS ID- Drain Current (A) Normalized On-Resistance TF3410 TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(Ω) Figure 7 Transfer Characteristics Vds Drain-Source Voltage (V) Vgs Gate-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Figure 11 Gate Charge www.sztuofeng.com Figure 12 Source- Drain Diode Forward 4 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS ID- Drain Current (A) TF3410 Vds Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area . Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance www.sztuofeng.com 5 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3410 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.sztuofeng.com 6 Feb,2018 V1.0