2341

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2341 TF2341 P-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 0.050Ω@-4.5V -20V 0.070Ω@-2.5V -4.1A 3 1.GATE 2.SOURCE 1 General FEATURE ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package 3.DRAIN 2 MARKING Equivalent Circuit 412TF w APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter *w：week code Maximum ratings (Ta=25℃ unless otherwise noted) Symbol Value Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 Parameter Continuous Drain Current ID -4.1 Pulsed Drain Current IDM -15 Continuous Source-Drain Diode Current IS -1.4 Maximum Power Dissipation PD Thermal Resistance from Junction to Ambient(t ≤5s) 125 Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 1 V A 1.25 R θJA www.sztuofeng.com Unit W ℃/W ℃ Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2341 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max -0.7 -1 Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -20 Gate-source threshold voltage VGS(th) VDS =VGS, ID =-250µA -0.5 Gate-source leakage IGSS VDS =0V, VGS =±12V ±100 nA Zero gate voltage drain current IDSS VDS =-16V, VGS =0V -1 µA Drain-source on-state resistance a RDS(on) Forward transconductance a gfs V VGS =-4.5V, ID =-4.1A 0.045 0.050 VGS =-2.5V, ID =-3.0A 0.065 0.070 VDS =-5V, ID =-2.0A 6.0 Ω S b Dynamic 740 Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 190 Total gate charge Qg 9.0 Gate-source charge Qgs Gate-drain charge Qgd 2.5 Turn-on delay time td(on) 12.0 Rise time tr Turn-off delay time td(off) Fall time VDS =-4 V ,VGS =0V,f =1MHz VDS =- 4V ,VGS =-4.5V,ID =-4.1A VDD=-4V,ID=-3.3A , RL=-1.2Ω,VGEN=-4.5V,Rg=1Ω tf 290 pF nC 1.0 35.0 ns 30.0 10.0 Drain-source body diode characteristics Continuous source-drain diode current Pulse diode forward current Body diode voltage a IS TC=25℃ -1.4 -10 ISM VSD A IS=-1.4A -0.8 -1.2 V Notes : a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b.Guaranteed by design, not subject to production testing. www.sztuofeng.com 2 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2341 Typical Electrical and Thermal Characteristics ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms Figure 1:Switching Test Circuit ID- Drain Current (A） 1.40 PD Power(W) 1.05 0.70 0.35 0 TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(Ω) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) ID- Drain Current (A) Figure 5 Output Characteristics www.sztuofeng.com Figure 6 Drain-Source On-Resistance 3 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS ID- Drain Current (A) Normalized On-Resistance TF2341 TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(Ω) Figure 7 Transfer Characteristics Vds Drain-Source Voltage (V) Vgs Gate-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Figure 11 Gate Charge www.sztuofeng.com Figure 12 Source- Drain Diode Forward 4 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS ID- Drain Current (A) TF2341 Vds Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance www.sztuofeng.com 5 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2341 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.sztuofeng.com 6 Feb,2018 V1.0