JSM3420

JSM3420 N-Channel 20-V(D-S) MOSFET ID RDS(on)MAX V(BR)DSS SOT-23-3 0.024Ω@ 10V 1.GATE 6.0 A 0.0 27Ω@ 4.5V 2.SOURCE ｏｒ 20V 3 3.DRAIN 0.035Ω@ 2.5V 2 ｃｔ 1 General FEATURE Equivalent Circuit ｄｕ ●TrenchFET Power MOSFET ●Lead free product is acquired ｏｎ ●Surface mount package 　Ｓ ｅｍ ｉｃ APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter ＭＩ ＣＲ Ｏ Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit VDS 20 Gate-Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current*1 ID 6.0 IDM 20 Continuous Source-Drain Diode Current IS 1.25 Maximum Power Dissipation PD 1.25 W R θJA 100 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 ＪＳ Drain-Source Voltage Thermal Resistance from Junction to Ambient(t ≤10 s) V A ℃ Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第１／６页 JSM3420 N-Channel 20-V(D-S) MOSFET MOSFET ELECTRICAL CHARAC TERISTICS Ta =25 ℃ unless otherwise specified Min Test Condition Symbol Parameter Typ Max 0.8 1.0 Units Static V(BR)DSS VGS = 0V, ID = 250µA 20 Gate-source threshold voltage VGS(th) VDS =VGS, ID = 250µA 0.5 Gate-source leakage IGSS VDS =0V, VGS =±12V Zero gate voltage drain current IDSS VDS =16V, VGS =0V VGS =4.5V, ID =5A VGS =2.5V, ID =4A Forward transconductance a gf s VDS =5V, ID =6A b Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Qgs Turn-on delay time ＭＩ ＣＲ Ｏ Rise time Turn-off delay time Fall time VDS =10V,VGS =4.5V,ID =6A Qgd 　Ｓ Gate-source charge Gate-drain charge VDS =15V,VGS =0V,f =1MHz ｉｃ Ciss ｅｍ Input capacitance ｏｎ Dynamic ｄｕ RDS(on) td(on) VDD=10V,ID =1A tr VGEN=4.5V,Rg=6Ω td(off) tf ±100 nA 100 nA 0.016 0.024 0. 019 0.027 0.023 0.035 25 - ｃｔ VGS =10 V , ID =6A Drain-source on-state resistance a V ｏｒ Drain-source breakdown voltage Ω S 742 66 pF 78 9.0 nC 1.5 2.6 12.0 23.0 ns 14.0 9.0 Drain-source body diode characteristics Continuous source-drain diode current ＪＳ Body diode voltage IS TC=25℃ VSD IS=1.0A 1.25 0.7 1.0 A V Notes : a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b.Guaranteed by design, not subject to production testing. ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第２／６页 JSM3420 N-Channel 20-V(D-S) MOSFET Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 20 BVDSS, Normalized Drain-Source Breakdown Voltage VGS=2V 12 8 4 1.2 1 ｏｒ ID, Drain Current(A) 16 0.8 0.6 ID=250μA, VGS=0V ｃｔ 10V, 9V,8V,7V,6V, 5V, 4V, 3V VGS=1.5V 0 1 2 3 ｄｕ 0.4 0 -75 4 -50 25 50 75 100 125 150 175 ｏｎ 1000 2.5V 3V 4.5V VSD, Source-Drain Voltage(V) 1.8V ｅｍ VGS=1.5V ｉｃ 1.2 　Ｓ 100 ＭＩ ＣＲ Ｏ R DS(on), Static Drain-Source On-State Resistance(mΩ) 0 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current VGS=10V 10 0.01 0.1 1 ID, Drain Current(A) 0.8 0.6 Tj=150°C 0.4 0 10 10 4 6 8 IDR , Reverse Drain Current(A) 1.8 R DS(on), Normalized Static DrainSource On-State Resistance 160 140 120 100 80 ID=6A ID=5.0A 40 2 Drain-Source On-State Resistance vs Junction Tempearture 180 60 Tj=25°C 0.2 ＪＳ 200 VGS=0V 1 Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(on), Static Drain-Source OnState Resistance(mΩ) -25 Tj, Junction Temperature(°C) VDS, Drain-Source Voltage(V) 20 VGS=4.5V, ID=6A 1.6 1.4 1.2 1 VGS=2.5V, ID=5.0A 0.8 0.6 0.4 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -60 ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ -20 20 60 100 140 Tj, Junction Temperature(°C) 180 第３／６页 JSM3420 N-Channel 20-V(D-S) MOSFET Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage C oss 0.8 0.6 0.4 10 1 10 VDS, Drain-Source Voltage(V) -60 -40 -20 100 VDS=5V ｅｍ 10 VGS, Gate-Source Voltage(V) ｉｃ 10 Pulsed Ta=25°C 　Ｓ 1 ＭＩ ＣＲ Ｏ 0.1 0.01 0.001 0.01 0.1 1 ID, Drain Current(A) 8 4 2 0 10 0 100 8 12 16 20 Maximum Drain Current vs JunctionTemperature ID, Maximum Drain Current(A) ＪＳ 8 100μs 1ms 10ms 100ms 0.1 4 Qg, Total Gate Charge(nC) 10 1 VDS=10V ID=6A 6 Maximum Safe Operating Area ID, Drain Current(A) 60 80 100 120 140 160 Gate Charge Characteristics 100 DC TA=25°C, Tj=150°C,VGS=4.5V RθJA=90°C/W, Single Pulse 0.01 0.01 20 40 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 100 0 ｏｎ 0.1 GFS, Forward Transfer Admittance(S) 1 ｏｒ Crss 100 ID=250μA 1.2 ｃｔ Ciss 1000 1.4 ｄｕ VGS(th), Normalized Threshold Voltage Capacitance---(pF) 10000 7 6 5 4 3 2 1 TA=25°C, VGS=4.5V 0 0.1 1 10 100 25 VDS, Drain-Source Voltage(V) ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 50 75 100 125 150 Tj, Junction Temperature(°C) 175 第４／６页 JSM3420 N-Channel 20-V(D-S) MOSFET Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Ambient (Note on page 1) Power Derating Curve 1.6 50 Mounted on FR-4 board with 1 in² pad area TJ(MAX) =150°C TA=25°C RθJA=90°C/W 1 0.8 0.6 0.4 ｏｒ 40 30 20 ｃｔ 1.2 Power (W) PD, Power Dissipation(W) 1.4 10 0 0 50 100 150 200 0 0.001 0.01 ｏｎ TA, Ambient Temperature(℃) ｄｕ 0.2 0.1 1 Pulse Width(s) 10 100 ｉｃ Transient Thermal Response Curves 1 ｅｍ 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*ZθJC(t) 4.RθJA=90 °C/W 　Ｓ 0.1 0.05 0.02 ＭＩ ＣＲ Ｏ Normalized Transient Thermal Resistance D=0.5 0.01 0.01 Single Pulse ＪＳ 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第５／６页 JSM3420 N-Channel 20-V(D-S) MOSFET Package Outline Dimensions Suggested Pad Layout ＪＳ ＭＩ ＣＲ Ｏ SOT-23 　Ｓ ｅｍ ｉｃ ｏｎ ｄｕ ｃｔ ｏｒ SOT-23 ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第６／６页