ATM3400ANSA

ATM3400ANSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage: 30V Drain Current: 5.8A FEATURES  Trench FET Power MOSFET  RDS(ON) < 35mΩ (VGS = 10V) SOT-23 RDS(ON) < 40mΩ (VGS = 4.5V) RDS(ON) < 52mΩ (VGS = 2.5V) APPLICATIONS  DC/DC Converter  Battery Switch Schematic diagram Drain 3 1 Gate 2 Source ABSOLUTE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V ID 5.8 A IDM 30 A PD 0.35 W RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ +150 ℃ Continuous Drain Current Pulsed Drain Current 1 Power Dissipation Thermal Resistance from Junction to Ambient 2 AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 1/6 Dated:09/2017 Rev: 1.0 ATM3400ANSA ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =24V,VGS = 0V Gate-body leakage current IGSS VGS =±12V, VDS = 0V VGS(th) VDS =VGS, ID =250µA Gate threshold voltage Drain-source on-resistance 3 RDS(on) Forward tranconductance Dynamic characteristics gFS 30 V 0.7 1 µA ±0.1 µA 1.4 V VGS =10V, ID =5.8A 27 35 VGS =4.5V, ID =5A 29 40 VGS =2.5V, ID =4A 38 52 VDS =5V, ID =5A 8 mΩ S 4 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Switching Characteristics 1050 VDS =15V,VGS =0V,f =1MHz 99 pF 77 VDS =0V,VGS =0V, f =1MHz 3.6 Ω 4 Turn-on delay time 5 td(on) Turn-on rise time Turn-off delay time Turn-off fall time tr VGS=10V,VDS=15V, 7 td(off) RL=2.7Ω,RGEN=3Ω 40 tf ns 6 Source-Drain Diode characteristics Diode Forward voltage 3 VDS VGS =0V, IS=1A 1 V Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width≤300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 2/6 Dated:09/2017 Rev: 1.0 ATM3400ANSA TYPICAL CHARACTERISTICS CURVES Transfer Characteristics Output Characteristics 2.0 20 Pulsed Pulsed 1.6 DRAIN CURRENT ID (A) 16 DRAIN CURRENT ID(A) VDS=2V Ta=25℃ VGS=2.5V,3V,4.5V,10V 12 VGS=2.0V 8 1.2 Ta=25℃ 0.8 0.4 4 0.0 0.0 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS (V) 5 0.5 1.0 1.5 2.0 2.5 RDS(ON) - VGS 150 Pulsed Ta=25℃ 60 3.0 GATE TO SOURCE VOLTAGE VGS (V) RDS(ON)  ID Pulsed ID=5.8A 125 ON-RESISTANCE RDS(ON) (m) 55 ON-RESISTANCE RDS(ON) (m) Ta=125℃ 50 45 VGS=2.5V 40 35 VGS=4.5V 30 100 75 50 Ta=125℃ 25 Ta=25℃ VGS=10V 25 0 5 10 15 0 20 0 DRAIN CURRENT ID (A) 2 4 6 8 GATE TO SOURCE VOLTAGE VGS (V) 10 Threshold Voltage IS - VSD 2.0 10 THRESHOLD VOLTAGE VTH (V) SOURCE CURRENT IS (A) Pulsed 1 Ta=125℃ Ta=25℃ 0.1 1.5 ID=-250uA 1.0 0.5 0.01 0.0 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE VSD (V) 1.2 25 1.4 50 75 100 125 JUNCTION TEMPERATURE Tj (℃) AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 3/6 Dated:09/2017 Rev: 1.0 ATM3400ANSA PACKAGE OUTLINE SOT-23（TO-236) 0.8 Max. 1.025 1.150 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 A E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 L θ 0.8 1.9 0.550REF L1 0.300 0o 0.500 8o 2.2 Typ. 0.900 1.0 Dimensions in millimeter Min. 1.0 Symbol SOT-23 (TO-236) Recommended soldering pad ORDERING INFORMATION Device ATM3400ANSA Package SOT-23 Shipping 3000/Reel&Tape(7inch) AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 4/6 Dated:09/2017 Rev: 1.0 ATM3400ANSA CONDITIONS OF SOLDERING AND STORAGE Recommended condition of reflow soldering  Figure Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time  Storage conditions  Temperature  5 to 40 OC Humidity  30 to 80% RH Recommended period One yaer after manufacturing AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 5/6 Dated:09/2017 Rev: 1.0 ATM3400ANSA PACKAGE SPECIFICATIONS  The method of packaging SOT-23 (TO-236) 3,000 pcs per reel 1 3 2 30,000 pcs per box 10 reels per box 220 195 0 21 43 5 120,000 pcs per carton 4 boxes per carton 435 210 Embossed tape and reel data T G 4.0 4.0 F N B H 8.0 E D  120°±2° 1Pin C A Tape (8mm) Symbol A B C E F D G H N T Reel (7'') AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 6/6 Value (unit: mm) 3.15 ± 0.1 2.7 ± 0.1 1.25 ± 0.1 2 ± 0.5 13 ± 0.5 178 ± 2.0 8.4 ± 1.5 4 ± 0.5 60 < 14.9 Dated:09/2017 Rev: 1.0