ATM2301PSA

ATM2301PSA P-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage: -20V Drain Current: -2.5A Features  Trench FET Power MOSFET  Excellent RDS(on) and Low Gate Charge  RDS(ON) < 110mΩ (VGS = -4.5V)  RDS(ON) < 130mΩ (VGS = -2.5V) Application  DC/DC Converter  Load Switch for Portable Devices  Battery Switch Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID -2.5 A Pulsed Drain Current IDM -10 A Power Dissipation PD 0.4 W RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ +150 ℃ Thermal Resistance from Junction to Ambient AGERTECH MICROELECTRONICS Subsidiary of Sino‐Talent International Holdings Ltd. 1/5 Dated:03/2018 Rev: 2.0 ATM2301PSA Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-16V,VGS = 0V -1 µA Gate-body leakage current IGSS VGS =±12V, VDS = 0V ±100 nA Gate threshold voltage VGS(th) VDS =VGS, ID =-250µA -0.75 -0.9 V Drain-source on-resistance1) RDS(on) VGS = -4.5V, ID = -4A 90 110 VGS = -2.5V, ID = -2A 110 130 Forward transconductance1) gFS VDS =-5V, ID =-2A -20 -0.4 V 5 mΩ S 2) Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.3 Turn-on delay time td(on) 11 Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time 405 VDS =-10V,VGS =0V,f =1MHz 75 pF 55 f =1MHz 6 3.3 VDS =-10V,VGS =-2.5V,ID=-3A VDD=-10V,VGEN=-4.5V,ID=-1A RL=10Ω,RGEN=1Ω tf Ω 12 0.7 nC 35 ns 30 10 Source-Drain Diode characteristics Diode Forward voltage VDS VGS =0V, IS=-1.25A -0.8 -1.3 V Notes: 1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 2) Guaranteed by design, not subject to production testing. AGERTECH MICROELECTRONICS Subsidiary of Sino‐Talent International Holdings Ltd. 2/5 Dated:03/2018 Rev: 2.0 ATM2301PSA Typical Characteristics Curves Output Characteristics Transfer Characteristics -10 -10 Pulsed Pulsed VGS=-2.5V -8 DRAIN CURRENT ID (A) -8 DRAIN CURRENT ID (A) VDS=-3V VGS=-3V,-4V,-5V Ta=25℃ -6 VGS=-2V -4 Ta=25℃ -6 Ta=100℃ -4 -2 -2 VGS=-1.5V 0 0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE VDS (V) 0 0.0 -4 -1.0 -1.5 -2.0 -2.5 -3.0 GATE TO SOURCE VOLTAGE VGS (V) RDS(ON)  ID 150 -0.5 RDS(ON) - VGS 500 Pulsed Ta=25℃ Pulsed 400 ON-RESISTANCE RDS(ON) (m) ON-RESISTANCE RDS(ON) (m) VGS=-2.5V 100 VGS=-4.5V 50 ID=-2.6A 300 Ta=100℃ 200 100 0 -0.5 -1.0 -1.5 -2.0 DRAIN CURRENT ID (A) -2.5 0 -3.0 Ta=25℃ 0 -1 -2 -3 -4 GATE TO SOURCE VOLTAGE VGS (V) -5 Threshold Voltage IS - VSD -1.2 THRESHOLD VOLTAGE VTH (V) SOURCE CURRENT IS (A) Pulsed 1 -1.0 -0.8 ID=-250uA -0.6 -0.4 0.1 0.0 -0.2 -0.5 -1.0 -1.5 -2.0 25 50 75 100 125 150 JUNCTION TEMPERATURE Tj (℃) SOURCE TO DRAIN VOLTAGE VSD (V) AGERTECH MICROELECTRONICS Subsidiary of Sino‐Talent International Holdings Ltd. 3/5 Dated:03/2018 Rev: 2.0 ATM2301PSA Package Outline SOT-23 Symbol Dimensions In Millimeters Min. Max. A 0.90 1.15 A1 0.00 0.10 A2 0.90 1.05 b 0.30 0.50 c 0.08 0.15 D 2.80 3.00 E 1.20 1.40 E1 2.25 2.55 e e1 0.95 REF. 1.80 2.00 L L1 0.55 REF. 0.30 0.50 AGERTECH MICROELECTRONICS Subsidiary of Sino‐Talent International Holdings Ltd. 4/5 Dated:03/2018 Rev: 2.0 ATM2301PSA Package Specifications AGERTECH MICROELECTRONICS Subsidiary of Sino‐Talent International Holdings Ltd. 5/5 Dated:03/2018 Rev: 2.0