MMBTA42

MMBTA42 TRANSISTOR (NPN) FEATURES z High breakdown voltage z Low collector-emitter saturation voltage z Complementary to MMBTA92 (PNP) SOT-23 3 2 1 1. BASE Marking: 1D 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.3 A ICM Collector Current-Peak 0.5 A PC Collector Power dissipation 0.35 W RӨJA Thermal Resistance, junction to Ambient 357 ℃/W TJ,Tstg Operation Junction and Storage Temperature Range ℃ -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA,IE=0 300 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 300 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 5 V Collector cut-off current ICBO VCB=200V, IE=0 0.25 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE= 10V, IC= 1mA 60 hFE(2) VCE= 10V, IC=10mA 100 hFE(3) VCE=10V, IC=30mA 60 Collector-emitter saturation voltage VCE(sat) IC=20mA, IB= 2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC= 20mA, IB=2mA 0.9 V DC current gain Transition frequency www.fuxinsemi.com fT Page 1 VCE= 20V, IC= 10mA, f=30MHz 50 200 MHz Ver2.1 MMBTA42 TRANSISTOR (NPN) 532! 0!22! IC 18 VCE —— —— IC COMMON EMITTER Ta=25℃ hFE 80uA 70uA 60uA 50uA 10 40uA 8 Ta=100℃ DC CURRENT GAIN (mA) 12 COLLECTOR CURRENT 14 IC 16 hFE 1000 90uA 30uA 6 Ta=25℃ 100 20uA 4 IB=10uA COMMON EMITTER VCE=10V 2 10 0.1 0 0 2 4 6 8 10 12 14 16 COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— 20 22 IC 10 VBEsat —— 900 Ta=100 ℃ 100 1 COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 500 18 VCE (V) Ta=25℃ 100 IC (mA) IC Ta=25℃ 600 Ta=100 ℃ β=10 β=10 10 0.1 1 10 COLLECTOR CURREMT IC 100 —— IC 1 fT VBE —— IC 100 (mA) IC (MHz) 300 fT 100 TRANSITION FREQUENCY T =2 5℃ a T =1 00℃ a 10 1 COMMON EMITTER VCE=10V COMMON EMITTER VCE=20V Ta=25℃ 0.1 0 300 600 900 10 0.1 1200 1 Cob/Cib 100 —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) f=1MHz IE=0/IC=0 (pF) C 10 Cob 1 0.1 1 REVERSE VOLTAGE www.fuxinsemi.com 10 V (V) PC 400 Ta=25 ℃ Cib 10 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) CAPACITANCE 10 COLLECTOR CURREMT (mA) (mA) IC COLLECTOR CURRENT 300 0.1 100 20 —— IC 100 (mA) Ta 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE Page 2 100 Ta 125 150 (℃ ) Ver2.1 MMBTA42 TRANSISTOR (NPN) SOT-23 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 2.000 0.071 e e1 0.950 TYP. 1.800 L L1 www.fuxinsemi.com 0.037 TYP. 0.550 REF. 0.300 0.079 0.022 REF. 0.500 Page 3 0.012 0.020 Ver2.1