FDN335N

FDN335N N-Ch 20V Fast Switching MOSFETs Description Product Summary The FDN335N is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FDN335N meets the RoHS and Green Product requirement with full function reliability approved. VDS 20 V RDS(ON),typ 46 mΩ ID 3 A SOT23S Pin Configuration ⚫ ⚫ ⚫ ⚫ Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ ±12 V Continuous Drain Current, VGS @ 4.5V1 3 A Continuous Drain Current, VGS @ 4.5V1 2.2 A Current2 10 A Dissipation3 0.71 W Pulsed Drain Total Power TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Junction-Case1 www.hs-semi.cn Thermal Resistance Ver 2.1 1 Typ. Max. Unit --- 120 ℃/W --- 65 ℃/W 1 FDN335N N-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) IDSS Gate Threshold Voltage Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V VGS=4.5V , ID=2.5A --- 46 60 VGS=2.5V , ID=1A --- 61 85 VGS=VDS , ID =250uA 0.5 0.65 1.0 VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 m V uA IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=2A --- 5 --- S Qg Total Gate Charge (4.5V) --- 3.5 --- Qgs Gate-Source Charge --- 0.6 --- Qgd Gate-Drain Charge --- 0.45 --- VDS=10V , VGS=4.5V , ID=2.5A nC --- 8 --- Rise Time VDD=10V , VGS=4.5V , RG=6 --- 7 --- Turn-Off Delay Time ID=2.5A --- 30 --- Fall Time --- 7 --- Ciss Input Capacitance --- 180 --- Coss Output Capacitance --- 39 --- Crss Reverse Transfer Capacitance --- 20 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- 3 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=10V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Diode Forward Current1,4 Voltage2 Conditions Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.1 2 FDN335N N-Ch 20V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 5 IS Source Current(A) 4 3 2 TJ=150℃ TJ=25℃ 1 0 0 0.3 0.6 0.9 1.2 VSD , Source-to-Drain Voltage (V) Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Ver 2.1 3 FDN335N N-Ch 20V Fast Switching MOSFETs 1000 F=1.0MHz Capacitance (pF) Ciss 100 Coss Crss 10 1 5 9 13 17 21 VDS , Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TC + PDM x RθJC 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance VDS 90% 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Gate Charge Waveform Ver 2.1 4 FDN335N N-Ch 20V Fast Switching MOSFETs Ordering Information Part Number FDN335N www.hs-semi.cn Package code SOT-23 Ver 2.1 Packaging 3000/Tape&Reel 5