BC807-25 5B

BC807 TRANSISTOR(PNP) SOT-23 贴片塑封三极管 SOT-23 Plastic-Encapsulate Transistors SOT-23 特征 Features  与 BC817 配对; Complementary to BC817  最大功率耗散 300mW; Power Dissipation of 300mW  高稳定性和可靠性。High Stability and High Reliability 机械数据 Mechanical Data    封装: SOT-23 封装 SOT-23 Small Outline Plastic Package 环氧树脂 UL 易燃等级 Epoxy UL: 94V-0 安装位置: 任意 Mounting Position: Any 极限值和温度特性(TA = 25℃ 除非另有规定) Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified.) 参数 Parameters 符号 Symbol 数值 Value 单位 Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter -Base Voltage VEBO -5 V Collector Current-Continuous IC -500 mA Collector Power Dissipation PC 300 mW Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55-+150 ℃ Thermal resistance from junction to ambient RθJA 417 ℃/W 电特性 (TA = 25℃ 除非另有规定) Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified). 参数 Parameter 符号 Symbols Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT DC current gain Collector-emitter saturation voltage Base -emitter saturation voltage Transition frequency CLASSIFICATION OF hFE(1) 界限 Limits 测试条件 Test Condition IC=-10uA, IE=0 IC=-10mA, IB=0 IE=-1uA, IC=0 VCB=-45V, IE=0 VEB=-4V, IC=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-500mA IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-5V, IC=-10mA,f=100MHz Min -50 -45 -5 100 40 Max -100 -100 600 -0.70 -1.20 100 RANK BC807-16 BC807-25 BC807-40 RANGE 100-250 160-400 250-600 Marking 5A 5B 5C Date:2018/8/2 单位 Unit V V V nA nA V V MHz BC807 Typical characteristics Date:2018/8/2 BC807 SOT-23 PACKAGE OUTLINE Plastic surface mounted package 焊盘设计参考Precautions: PCB Design Recommended land dimensions for SOT-23 diode. Electrode patterns for PCBs Date:2018/8/2