S9012

S9012 TRANSISTOR (PNP) SOT-23 FEATURES z z z High Collector Current Complementary To S9013 Excellent hFE Linearity 3 2 MARKING: 2T1 1 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 416 ℃/W -55~+150 ℃ RΘJA TJ,Tstg Operation Junction and Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Collector-base breakdown voltage V(BR)CBO IC=-0.1mA, IE=0 conditions Min -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 uA Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 uA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 uA DC current gain hFE VCE=-1V, IC=-50mA 120 Typ Max Unit 400 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -1.2 V fT Transition frequency Cob Collector output capacitance VCE=-6V,IC=-20mA, f=30MHz VCB=-10V, IE=0, f=1MHz 150 MHz 5 pF CLASSIFICATION OF hFE RANK L H J RANGE 120-200 200-350 300-400 www.fuxinsemi.com Page 1 Ver2.1 S9012 TRANSISTOR (PNP) Typical Characteristics Static Characteristic -100 (mA) -350uA -80 IC Ta=100℃ hFE -300uA IC —— COMMON EMITTER VCE=-1V COMMON EMITTER Ta=25℃ -400uA DC CURRENT GAIN -250uA COLLECTOR CURRENT hFE 400 -60 -200uA -150uA -40 -100uA 300 Ta=25℃ 200 100 -20 IB=-50uA -0 0 -4 -8 -12 -16 COLLECTOR-EMITTER VOLTAGE VCEsat COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1000 —— VCE -10 IC VBEsat -1.2 Ta=25℃ -10 -500 -100 COLLECTOR CURRENT (V) Ta=100℃ -100 -1 -20 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) -0 IC (mA) IC —— Ta=25℃ -0.8 Ta=100℃ -0.4 β=10 β=10 -1 -0.0 -1 -10 COLLECTOR CURRENT fT 500 -500 -100 IC -1 (mA) -10 -100 COLLECTOR CURRENT —— IC 100 Cob/ Cib —— IC VCB/ VEB f=1MHz IE=0/ IC=0 VCE=-6V o Ta=25 C (MHz) -500 (mA) Ta=25℃ Cob CAPACITANCE C TRANSITION FREQUENCY (pF) fT Cib 100 -5 -10 1 -0.1 -100 COLLECTOR CURRENT Pc —— IC 10 (mA) -1 REVERSE VOLTAGE -10 V -20 (V) Ta COLLECTOR POWER DISSIPATION Pc (mW) 400 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE www.fuxinsemi.com 100 Ta 125 150 (℃) Page 2 Ver2.1 S9012 TRANSISTOR (PNP) SOT-23 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 2.000 0.071 e e1 0.950 TYP. 1.800 L L1 www.fuxinsemi.com 0.037 TYP. 0.550 REF. 0.300 0.079 0.022 REF. 0.500 Page 3 0.012 0.020 Ver2.1