FS2312

FS2312 N-Channel SMD MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 18mΩ@4.5V 20V 22mΩ@2.5V 6.8A 39mΩ@1.8V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23 Marking S12 www.fuxinsemi.com Page 1 Ver2.1 FS2312 N-Channel SMD MOSFET Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V Continuous Drain Current ID 6.8 A Pulsed Drain Current IDM 27 A Power Dissipation PD 1.2 W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 ℃ ℃ Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =20V,VGS = 0V Gate-body leakage current IGSS VGS =±10V, VDS = 0V VGS(th) VDS =VGS, ID =250µA Gate threshold voltage Drain-source on-resistance 1) RDS(on) 20 V 0.45 1 µA ±100 nA 1.0 V VGS =4.5V, ID =6.8A 18 VGS =2.5V, ID =3.0A 22 VGS =1.8V, ID =2.5A 39 mΩ 2) Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg 900 VDS =10V,VGS =0V,f =1MHz 165 75 9.2 VDS =10V,VGS =4.5V, ID =6.8A Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.9 Turn-on delay time td(on) 12 Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time pF VDD=10V, VGS =4.5V, RGEN=3Ω, RL=1.5Ω tf nC 1.7 52 nS 17 10 Source-Drain Diode characteristics 1) Diode Forward Current IS Diode Forward voltage VDS VGS =0V, IS=6.8A 6.8 A 1.2 V Notes: 1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 2) Guaranteed by design, not subject to production testing. www.fuxinsemi.com Page 2 Ver2.1 FS2312 N-Channel SMD MOSFET Typical Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance www.fuxinsemi.com Figure6. Drain-Source on Resistance Page 3 Ver2.1 FS2312 N-Channel SMD MOSFET SOT-23 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 2.000 0.071 e e1 0.950 TYP. 1.800 L L1 www.fuxinsemi.com 0.037 TYP. 0.550 REF. 0.300 0.079 0.022 REF. 0.500 Page 4 0.012 0.020 Ver2.1