KSI2301CDS-T1-GE3

KSI2301CDS-T1-GE3 SOT-23 Plastic-Encapsulate Transistors FEATURES TrenchFET Power MOSFET MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Value Units VDS Symbol Drain-Source voltage Parameter -20 V VGS Gate-Source voltage ±12 V ID Drain current -3 A PD Power Dissipation 1 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -20 Gate-Threshold Voltage -0.4 Vth(GS) VDS= VGS, ID=-250 uA Gate-body Leakage IGSS VDS=0V, VGS=±12V Zero Gate Voltage Drain Current IDSS VDS=-20V, VGS=0V Drain-Source On-Resistance rDS(ON) Forward Trans conductance gfs TYP MAX UNIT V -0.7 -1 V ±100 nA -1 uA VGS=-4.5V, ID=-3A 64 110 mΩ VGS=-2.5V, ID=-2A 89 140 mΩ VDS=-5V, ID=-2.8A 9.5 s Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 405 VDS=-10V, VGS=0V, f=1MHz pF 75 55 Switching Capacitance Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time 11 VDD=-10V, ID=-1A, VGS=-4.5V RGEN=10Ω tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-10V, ID=-3A, VGS=-2.5V, nS 35 nS 30 nS 10 nS 3.3 12 nC 0.7 nC 1.3 nC Drain-Source Diode Characteristics Diode Forward Voltage VSD Diode Forward Current Is VGS=0V, ID=-1.3A 1/2 -1.2 V -1.3 A KSI2301CDS-T1-GE3 2/2