2N7002K

2N7002K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR FEATURES  N-channel Enhancement Mode Field Effect Transistor, Designed For High Speed Pulse Amplifier And Drive Application, Which Is Manufactured By The N-Channel DMOS Process.  ESD MIL-STD 833, ±2.5KV Contact Discharge Compliant Protection D MECHANICAL DATA S  Available in SOT-23 Package  Solderability：MIL-STD-202, Method 208 G  Full RoHS Compliance ORDERING INFORMATION PART NUMBER 2N7002K□-T3 PACKAGE SHIPPING MARKING CODE SOT-23 Tape Reel 7002K Notes: 1. □: none is for Lead Free package; “G” is for Halogen Free package. THERMAL DATA PARAMETER SYMBOL VALUES UNIT Thermal Resistance, Junction-to-Ambient RθJA 357 °C/W Thermal Resistance, Junction-to-Case RθJC 90 °C/W Notes: 2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determind by the user’s board 2 design. The value of RθJA is measured with device mounted on 1 in FR-4 board with 2 oz copper. STD_V3.0 PAGE.1 2N7002K ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted. (Note 3) PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Drain Current (Pulsed) (Note 4) IDM 800 mA Drain Current (Continuous) ID 300 mA Maximum Power Dissipation PD 350 mW Operating Junction Temperature Range TJ -55 to +150 °C Tstg -55 to +150 °C Storage Temperature Range Notes: 3. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 4. Pulse width limited by maximum junction temperature. STD_V3.0 PAGE.2 2N7002K ELECTRICAL CHARACTERISTICS TC = 25°C, unless otherwise noted. PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 10A Drain-Source Leakage Current IDSS VGS = 0V, VDS = 60V, TJ = 25°C Gate- Source Leakage Current ±IGSS VDS = 0V, VGS = ±20V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A Static Drain-Source On Resistance RDS(ON) VGS = 10V, ID = 300mA 60 V 1 A ±10 A 1.7 2.5 V 2.0 3.0 Ω (Note 5) ON CHARACTERISTICS 1.0 DYNAMIC CHARACTERISTICS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 50 VDS = 25V, VGS = 0V, f = 1.0MHz 25 pF 5.0 SWITCHING CHARACTERISTICS Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf 6 VDD = 30V, ID = 200mA, RL=150Ω, VGEN=10V 5 nS 25 RGEN=25Ω 15 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-source Diode Forward Voltage Transfer Admittance VSD VGS = 0V, IS = 300mA ︱Yfs︱ ID = 200mA, VDS = 15V 0.85 80 1.5 V mS Notes: 5. Pulse test：Pulse width ≦300μS, Duty cycle ≦2% STD_V3.0 PAGE.3 2N7002K TYPICAL PERFORMANCE CHARACTERISTICS Output Characteristics Drain-Source On Resistance 1.0 4.0 RDS(ON) - On Resistance (Ω) 0.8 ID - Drain Current (A) 3.5 VGS= 4,5,6,8,10 V 3.0 V 0.6 0.4 0.2 2.1V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 3.0 VGS= 4.5V 2.5 2.0 VGS= 10 V 1.5 1.0 0.5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VDS - Drain-Source Voltage (V) 1.6 ID= 0.4 A 2.8 RDS(ON) - On Resistance (Ω) Gate Threshold Voltage Transfer Characteristics 2.6 2.4 2.2 2.0 1.8 1.6 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) STD_V3.0 Normalized Threshold Voltage 3.0 ID - Drain Current (A) IDS = 250 A 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) PAGE.4 2N7002K Drain-Source On Resistance Source-Drain Diode Forward 20 VGS= 10 V 1.8 ID = 0.4 A IS - Source Current (A) Normalized On Resistance 2.0 1.6 1.4 1.2 1.0 0.8 10 o Tj= 150 C o Tj =25 C 1 0.6 o 0.4 -50 -25 RON@Tj= 25 C: 1.9  0 25 50 0.1 0.0 75 100 125 150 Tj - Junction Temperature (°C) C - Capacitance (pF) 45 40 35 Ciss 30 25 20 15 10 Coss 5 0 Crss 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 VDS - Drain-Source Voltage (V) STD_V3.0 1.2 1.5 1.8 VDS= 10 V 4 Frequency = 1 MHz 50 0.9 Gate Charge Capacitance 55 0.6 VSD - Source-Drain Voltage (V) VGS - Gate-Source Voltage (V) 60 0.3 IDS= 0.4 A 3 2 1 0 0 50 100 150 200 250 300 350 QG - Gate Charge (pC) PAGE.5 2N7002K PHYSICAL DIMENSION Unit：Inch (Millimeter) SOT-23 STD_V3.0 PAGE.6