ASDM3401ZB-R

ASDM3401ZB -30V P-CHANNEL MOSFET Product Summary FEATURES z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability -30 V DS R DS(on),Max@ VGS=-10 V Application 65 -4.2 ID V mΩ A ● PWM applications ● Load switch ● Power management top view D G S SOT-23/ Maximum ratings ( Ta=25℃ unless otherwise noted) DEC 2018 Version1.1 1/7 Ascend Semicondutor Co.,Ltd ASDM3401ZB -30V P-CHANNEL MOSFET Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -30 V Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 µA Gate-source leakage current IGSS VGS =±12V, VDS = 0V ±100 nA VGS =-10V, ID =-4A 65 mΩ VGS =-4.5V, ID =-3A 75 mΩ VGS =-2.5V,ID=-1A 100 mΩ On characteristics Drain-source on-resistance (note 1) Forward tranconductance (note 1) Gate threshold voltage RDS(on) gFS VGS(th) VDS =-5V, ID =-5A VDS =VGS, ID =-250µA 7 S -0.5 -1.5 V Dynamic characteristics (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS =-15V,VGS =0V,f =1MHz 954 pF 115 pF 77 pF Switching characteristics (note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall Time td(on) tr td(off) 6.3 ns VGS=-10V,VDS=-15V, 3.2 ns RL=3.6Ω,RGEN=6Ω 38.2 ns 12 ns -1 V tf Drain-source diode characteristics and maximum ratings Diode forward voltage (note 1) VSD IS=-1A,VGS=0V Note : 1. Pulse Test : Pulse width≤300µs, duty cycle≤2%. 2. These parameters have no way to verify. DEC 2018 Version1.1 2/7 Ascend Semicondutor Co.,Ltd ASDM3401ZB -30V P-CHANNEL MOSFET Typical Characteristics Transfer Characteristics Output Characteristics -25 VGS=-10V Ta=25℃ -5 VGS=-4.5V Pulsed -4 (A) VGS=-2.0V -3 -2 -1 -5 -0 ID -10 VGS=-2.5V DRAIN CURRENT ID DRAIN CURRENT (A) -20 -15 Ta=25℃ VGS=-3.0V Pulsed -0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE RDS(ON) 120 —— VDS -5 -0 -0.0 (V) -0.5 -1.0 -1.5 GATE TO SOURCE VOLTAGE RDS(ON) ID —— -2.0 VGS -2.5 (V) VGS 100 Ta=25℃ Ta=25℃ Pulsed Pulsed ON-RESISTANCE RDS(ON) (mΩ) ON-RESISTANCE RDS(ON) (mΩ) 100 80 VGS=-2.5V 80 VGS=-4.5V 60 ID=-2A 60 VGS=-10V 40 40 20 -0 -2 -4 -6 DRAIN CURRENT -10 IS —— ID -8 -10 20 -0 -2 -4 -6 GATE TO SOURCE VOLTAGE (A) -8 VGS -10 (V) VSD Ta=25℃ Pulsed -0.1 SOURCE CURRENT IS (A) -1 -0.01 -1E-3 -1E-4 -1E-5 -0.0 -0.3 -0.6 SOURCE TO DRAIN VOLTAGE DEC 2018 Version1.1 -0.9 VSD -1.5 (V) 3/7 Ascend Semicondutor Co.,Ltd ASDM3401ZB -30V -VDS DEC 2018 Version1.1 4/7 P-CHANNEL MOSFET -- C Ascend Semicondutor Co.,Ltd ASDM3401ZB -30V P-CHANNEL MOSFET Ordering and Marking Information Ordering Device No. ASDM3401ZB-R Marking Package Packing Quantity 3401 SOT23-3 Tape&Reel 3000/Reel MARKING PACKAGE SOT23-3 DEC 2018 Version1.1 3401 5/7 Ascend Semicondutor Co.,Ltd ASDM3401ZB -30V P-CHANNEL MOSFET SOT-23-3L PACKAGE INFORMATION DEC 2018 Version1.1 6/7 Ascend Semicondutor Co.,Ltd ASDM3401ZB -30V P-CHANNEL MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Xi‘an Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Xi‘an Ascend Semiconductor Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Xi‘an Ascend Semiconductor Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume . all risks of such use and will agree to hold Ascendsemi Incorporated and all the companies whose products are represented on Xi‘an Ascend Semiconductor Incorporated website, harmless against all damages. Xi‘an Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Xi‘an Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Xi‘an Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com DEC 2018 Version1.1 7/7 Ascend Semicondutor Co.,Ltd