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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate MOSFETS TF34 07 TF34 07 P-Channel 30-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23-3L 0.050Ω@-10V -30V 0.070Ω@-4.5V -4.1A 3 1.GATE 2.SOURCE 1 General FEATURE ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package 3.DRAIN 2 MARKING Equivalent Circuit A79TF w APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter *w：week code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Value Symbol Unit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current ID -4.1 Pulsed Drain Current IDM -20 Maximum Power Dissipation PD 1.4 W R θJA 84 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 Thermal Resistance from Junction to Ambient(t ≤5s) www.sztuofeng.com 1 V A ℃ Mar ,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate MOSFETS TF34 07 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Static characteristics Drain-source breakdown voltage BVDSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 µA Gate-source leakage current IGSS VGS =±20V, VDS = 0V ±100 nA Drain-source on-resistance (note a) Forward tranconductance (note a) Gate threshold voltage Diode forward voltage (note a) RDS(on) gFS VGS(th) VSD -30 V VGS =-10V, ID =-4.1A 48 50 mΩ VGS =-4.5V, ID =-3A 65 70 mΩ VDS =-5V, ID =-4.1A 5.5 VDS =VGS, ID =-250µA -1 S -1.4 IS=-1A,VGS=0V -3 V -1 V Dynamic characteristics (note b) Input capacitance Ciss 700 pF Output capacitance Coss 120 pF Reverse transfer capacitance Crss 75 pF td(on) 9.0 ns 5.0 ns 28.2 ns 13.5 ns VDS =-15V,VGS =0V,f =1MHz Switching Characteristics (note b) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=3Ω tf Notes: a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b.These parameters have no way to verify. www.sztuofeng.com 2 Mar ,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate MOSFETS TF34 07 Typical Electrical and Thermal Characteristics ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) ID- Drain Current (A) Figure 5 Output Characteristics www.sztuofeng.com Figure 6 Drain-Source On-Resistance 3 Mar ,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate MOSFETS ID- Drain Current (A) Normalized On-Resistance TF34 07 TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Figure 11 Gate Charge www.sztuofeng.com Figure 12 Source- Drain Diode Forward 4 Mar ,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate MOSFETS ID- Drain Current (A) TF34 07 Vds Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance www.sztuofeng.com 5 Mar ,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate MOSFETS TF34 07 SOT-23-3L Package Outline Dimensions Symbol A A1 A2 b c D E1 E e e1 L  Dimensions In Millimeters Min. Max. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8° SOT-23-3L Suggested Pad Layout www.sztuofeng.com 6 Mar ,2018 V1.0