2333

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate MOSFETS TF2333 TF2333 P-Channel 12-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23-3L 0.026Ω@-4.5V 0.033Ω@-2.5V -15V 3 -6.0A 1.GATE 2.SOURCE 0.055 Ω@-1.8V 1 General FEATURE ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package 3.DRAIN 2 MARKING Equivalent Circuit O36TF w APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter *w：week code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Value Symbol Drain-Source Voltage VDS -15 Gate-Source Voltage VGS ±12 Unit V Continuous Drain Current ID -6.0 Pulsed Drain Current IDM -20 Continuous Source-Drain Diode Current IS -1.4 Maximum Power Dissipation PD 1 W R θJA 69 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 Thermal Resistance from Junction to Ambient(t ≤5s) www.sztuofeng.com 1 A ℃ Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate MOSFETS TF2333 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max -0.7 -1 Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -15 Gate-source threshold voltage VGS(th) VDS =VGS, ID =-250µA -0.4 Gate-source leakage IGSS VDS =0V, VGS =±10 V ±100 nA Zero gate voltage drain current IDSS VDS =-12V, VGS =0V -1 µA Drain-source on-state resistance a Forward transconductance RDS(on) a gfs VGS =-4.5V, ID =-6.0A 0.023 0.026 VGS =-2.5V, ID =-5.0A 0.030 0.033 VGS =-1.8V, ID =-3.0A 0.045 0.055 VDS =-5V, ID =-5.0A 17.0 - V Ω S b Dynamic 1100 Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 300 Total gate charge Qg 11.5 Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf VDS =-6V,VGS =0V,f =1MHz 390 VDS =-6V,VGS =-4.5V,ID =-5.0A pF nC 1.5 3.2 f =1MHz VDD=-6V,ID =-4.0A RL=6Ω, VGEN=-4.5V,Rg=6Ω 1.9 19 Ω 25.0 45.0 ns 72.0 60.0 Drain-source body diode characteristics Continuous source-drain diode current IS Pulse diode forward current a ISM Body diode voltage VSD TC=25℃ -1.0 IS=-1.0A -0.8 -1.2 Notes : a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b.Guaranteed by design, not subject to production testing. www.sztuofeng.com A -20 2 Feb,2018 V1.0 V SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate MOSFETS TF2333 Typical Electrical and Thermal Characteristics ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 3 Power Dissipation - - Rdson On-Resistance(Ω) ID- Drain Current (A) - Figure 4 Drain Current - - - - . ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 5 Output Characteristics www.sztuofeng.com Figure 6 Drain-Source On-Resistance 3 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate MOSFETS ID- Drain Current (A) Normalized On-Resistance TF2333 TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(Ω) Figure 7 Transfer Characteristics -6A - Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Vgs Gate-Source Voltage (V) -6A -6A Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Figure 11 Gate Charge www.sztuofeng.com Figure 12 Source- Drain Diode Forward 4 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate MOSFETS ID- Drain Current (A) TF2333 Vds Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance www.sztuofeng.com 5 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate MOSFETS TF2333 SOT-23-3L Package Information Notes 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.sztuofeng.com 6 Feb,2018 V1.0