TTX2N7002KA

TTX2N7002KA Wuxi Unigroup Microelectronics CO.,LTD. 60V N-Channel Trench MOSFET(Preliminary)  General Description Product Summary  Trench Power technology  Low RDS(ON) 2 Ω  Low Gate Charge  Low Input and Output Leakage VDS 60V ID (at VGS =10V) 0.35A RDS(ON) (at VGS =10V) < 2Ω  2000 V ESD Protection Applications 100% UIS Tested  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial SOT-23 Part Number Package Type Form Marking TTX2N7002KA SOT-23 Tape&Reel 7002KA Absolute Maximum Ratings (TA =25ºC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B TC =25ºC TC =100ºC A C Maximum Units VDS 60 V VGS ±20 V 300 ID 190 IDM TC =25ºC 800 mA 0.35 W 0.14 W TJ, TSTG -55 to 175 ºC Symbol Maximum Units 300 ºC/W PD TC =100ºC Junction and Storage Temperature Range mA Thermal Characteristics Parameter Maximum Junction-to-Ambient V1.0 Steady-State RƟJA 1 www.tsinghuaicwx.com TTX2N7002KA Wuxi Unigroup Microelectronics CO.,LTD. Electrical Characteristics(TJ =25ºC unless otherwise noted) Value Symbol Parameter Conditions Units Min Typ Max 60 -- -- TJ =25ºC -- -- 1 TJ =100ºC -- -- 500 STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID =10uA,VGS =0V IDSS Zero Gate Voltage Drain Current VDS =60V, VGS =0V V μA IGSS Gate-Body Leakage Current VDS =0V, VGS =±20V -- -- ±10 uA VGS(th) Gate Threshold Voltage VDS =VGS, ID =250µA 1 -- 2.5 V VGS =10V, ID =0.35A -- -- 2 Ω RDS(ON) Static Drain-Source On-Resistance VGS =4.5V, ID =0.35A -- -- 4 Ω 100 -- -- ms -- -- 1.3 mV -- 40 -- -- 18 -- -- 3.6 -- -- 0.8 -- -- 0.45 -- -- 0.2 -- -- 28 -- -- 40 -- gFS Forward Transconductance VDS =10V, ID =0.35A VSD Diode Forward Voltage IS =0.2A, VGS =0V DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS =0V, VDS =25V, f =1MHZ pF SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge TD(on) Turn-On Delay Time TD(off) Turn-Off Delay Time VGS =4.5V,VDS =10V, ID =0.25mA VDD = 30 V, RL = 150 Ω ID = 200 mA, VGEN = 10 V, RG = 10 Ω nC ns A. Single pulse width limited by maximum junction temperature. B. The maximum current rating is package limited. C. The power dissipation PD is based on TJ(MAX) =175ºC, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. V1.0 2 www.tsinghuaicwx.com TTX2N7002KA Wuxi Unigroup Microelectronics CO.,LTD. Typical Characteristics TJ = 25ºC, unless otherwise noted 1,200 1 0.9 10V 7V 6V 5V 4V 3V 0.7 ID (A) 0.6 1,000 TJ = 25ºC 800 ID (mA) 0.8 0.5 TJ = 125ºC 600 0.4 400 0.3 0.2 200 0.1 0 0 0 1 2 3 4 0 5 VDS (Volts) Figure 1: On-Region Characteristics 2 3 4 5 6 VGS (Volts) Figure 2: Transfer Characteristics 4 50 3.5 40 Capacitance (pF) RDS(on) (mΩ) 1 VGS = 4.5V 3 2.5 VGS = 10V 2 30 Ciss 20 VGS = 0 f = 1MHz Crss 10 1.5 Coss 0 1 0 200 400 600 800 0 1000 7 102 6 101 5 100 4 10 15 20 25 TJ = 125ºC 10-1 TJ = 25ºC VDD = 30V 3 5 VDS (Volts) Figure 4: Capacitance Characteristics IS (A) VGS (Volts) ID (mA) Figure 3: On-Resistance vs. Drain Current 10-2 10-3 2 10-4 1 10-5 0 0 0.1 0.2 0.3 0.4 0.5 0 0.6 Qg (nC) Figure 5: Gate Charge Characteristics V1.0 0.2 0.4 0.6 0.8 1 VSD (Volts) Figure 6: Body Diode Forward Voltage 3 www.tsinghuaicwx.com TTX2N7002KA Wuxi Unigroup Microelectronics CO.,LTD. Typical Characteristics TJ = 25ºC, unless otherwise noted 0.4 ID = 200mA ID = 250µA 0.3 Normalized Vgs(th) RDS(on) - On-Resistance (Ω) 5 4 ID = 500mA 3 2 0.2 0.1 0 -0.1 -0.2 -0.3 -0.4 1 -0.5 -0.6 -50 0 0 2 4 6 8 10 0 25 50 75 100 125 150 Temperature(ºC) Figure 8: Vgs(th) vs. Junction Temperature 102 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-1 101 tp = 10us tp = 100us tp = 1ms tp = 10ms DC 100 10-2 10-1 10-5 10-4 10-3 10-2 10-1 100 10-1 Pulse Width (s) 100 101 102 103 VDS (Volts) Figure 9: Normalized Transient Thermal Resistance V1.0 -25 103 101 ID (Amps) Z Ɵ JC Normalized Transient Thermal Resistance VGS - Gate-to-Source Voltage (V) Figure 7: On-Resistance vs. Junction Temperature 4 Figure 10: Safe Operating Area www.tsinghuaicwx.com TTX2N7002KA Wuxi Unigroup Microelectronics CO.,LTD. Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform V1.0 5 www.tsinghuaicwx.com TTX2N7002KA Wuxi Unigroup Microelectronics CO.,LTD. SOT-23(封装厂 N) V1.0 6 www.tsinghuaicwx.com TTX2N7002KA Wuxi Unigroup Microelectronics CO.,LTD. Disclaimer All product specifications and data are subject to change without notice. For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume any legal liability or responsibility for the accuracy, completeness of any product or technology disclosed hereunder. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document or by any conduct of Wuxi Unigroup. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. 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Wuxi Unigroup believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. V1.0 7 www.tsinghuaicwx.com