HSS2307

HSS2307 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS2307 is the high cell density trenched Pch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSS2307 meet the RoHS and Green Product requirement with full function reliability approved. ⚫ ⚫ ⚫ ⚫ Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology VDS -20 V RDS(ON),typ 20 mΩ ID -6 A SOT 23 Pin Configurations Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±12 V ID@TA=25℃ Continuous Drain Current, VGS @ -4.5V1 -6 A ID@TA=70℃ Continuous Drain Current, VGS @ -4.5V1 -4 A IDM Pulsed Drain Current2 -24 A PD@TA=25℃ Total Power Dissipation3 1.4 W PD@TA=70℃ Total Power Dissipation3 0.9 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA RθJA www.hs-semi.cn Typ. Max. Unit Thermal Resistance Junction-Ambient 1 --- 125 ℃/W Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 90 ℃/W Ver 2.0 1 HSS2307 P-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.014 --- V/℃ VGS=-4.5V , ID=-6A --- 20 25 VGS=-2.5V , ID=-5A --- 25 30 VGS=-1.8V , ID=-3A --- 38 45 -0.5 -0.7 -1.0 V --- 3.95 --- mV/℃ VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA m △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-6A --- 8 --- S Qg Total Gate Charge (-4.5V) --- 17 --- --- 4.3 --- VDS=-10V , VGS=-4.5V , ID=-6A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 4.3 --- Turn-On Delay Time --- 23 --- Td(on) uA nC Rise Time VDD=-10V , VGS=-4.5V , --- 31 --- Turn-Off Delay Time RG=3.3, ID=-3A --- 70 --- Fall Time --- 50 --- Ciss Input Capacitance --- 2100 --- Coss Output Capacitance --- 489 --- Crss Reverse Transfer Capacitance --- 304 --- Min. Typ. Max. Unit --- --- -6 A --- --- -24 A --- --- -1.2 V Tr Td(off) Tf VDS=-10V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current1,4 ISM Pulsed Source Current2,4 VSD Diode Forward Voltage2 Conditions VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSS2307 P-Ch 20V Fast Switching MOSFETs Typical Characteristics www.hs-semi.cn Ver 2.0 3 HSS2307 P-Ch 20V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 4 HSS2307 P-Ch 20V Fast Switching MOSFETs Ordering Information Part Number HSS2307 www.hs-semi.cn Package code SOT-23L Ver 2.0 Packaging 3000/Tape&Reel 5