VB1240B
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N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® power MOSFET
20
RDS(on) max. () at VGS = 4.5V
0.020
RDS(on) max. () at VGS = 2.5V
0.025
Qg typ. (nC
• Low on-resistance
• 100 % Rg tested
4.0
ID (A) a, e
• Material categorization:
for definitions of compliance please see
6
Configuration
Single
D
SOT-23
G
(3)
1
S
G
D
3
(1)
2
S
(2)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
20
Gate-source voltage
VGS
± 12
TC = 70 °C
5e
ID
TA = 25 °C
5.0 b, c
4.4 b, c
TA = 70 °C
Pulsed drain current (t = 300 μs)
IDM
TC = 25 °C
Continuous source-drain diode current
2.1
1.1 b, c
TC = 25 °C
2.8
TC = 70 °C
1.6
PD
TA = 25 °C
W
1.3 b, c
0.8 b, c
TA = 70 °C
Operating junction and storage temperature range
A
26
IS
TA = 25 °C
Maximum power dissipation
V
6e
TC = 25 °C
Continuous drain current (TJ = 150 °C)
UNIT
TJ, Tstg
-55 to +150
Soldering recommendations (peak temperature)
°C
260
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
Maximum junction-to-ambient b, d
t5s
RthJA
75
100
Maximum junction-to-foot (drain)
Steady state
RthJF
40
50
UNIT
°C/W
Notes
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. Maximum under steady state conditions is 166 °C/W
e. Package limited
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
20
-
-
V
-
30
-
-
-4.8
-
1.5
-
± 100
Static
Drain-source breakdown voltage
VDS temperature coefficient
VDS/TJ
ID = 250 μA
VGS(th) temperature coefficient
VGS(th)/TJ
Gate-source threshold voltage
VGS(th)
VDS = VGS , ID = 250 μA
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 20 V
0.5
-
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
mV/°C
V
nA
VDS = 20V, V GS = 0 V
-
-
1
VDS = 20V, V GS = 0 V, TJ = 70 °C
-
-
10
VDS 5 V, VGS = 10 V
-
-
A
0.020
VGS = 2.5 V, ID = 5 A
20
-
0.025
-
VDS = 15 V, ID = 5.5 A
-
24
-
S
-
900
-
VDS = 10 V, VGS = 0 V, f = 1 MHz
-
100
-
-
42
-
-
8.2
13
-
4.2
7
VDS = 10 V, VGS = 4.5 V, ID = 5.5 A
-
1.4
-
-
1.4
-
f = 1 MHz
2.5
12.6
25.2
-
6
12
-
20
30
-
14
21
tf
-
10
20
td(on)
-
3
6
-
11
20
-
20
30
-
7
14
-
7
-
25
IS = 4.4 A, VGS = 0 V
-
0.82
1.2
-
13
20
ns
IF = 4.4 A, di/dt = 100 A/μs,
TJ = 25 °C
-
6
12
nC
-
8
-
-
5
-
RDS(on)
gfs
VGS = 4.5V, ID = 5.5 A
μA
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = 10 V, VGS = 10 V, ID = 5.5 A
td(on)
tr
td(off)
tr
td(off)
VDD = 10 V, RL = 3.4
ID 4.4 A, VGEN = 4.5 V, Rg = 1
VDD = 10 V, RL = 3.4
ID 4.4 A, VGEN = 10 V, Rg = 1
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise Time
tb
TC = 25 °C
A
V
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
5
25
VGS = 10 V thru 4 V
4
ID - Drain Current (A)
ID - Drain Current (A)
20
VGS = 3 V
15
10
TC = 25 °C
2
1
5
TC = 125 °C
TC = - 55 °C
0
0
0
0.5
1
1.5
2
0
0.5
1
1.5
2
2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.032
600
0.028
450
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
3
VGS = 2.5V
0.024
VGS = 4.5V
Ciss
300
150
0.020
Coss
Crss
0
0.016
0
10
5
15
20
0
25
12
6
ID - Drain Current (A)
18
24
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.7
10
ID = 5.5 A
ID = 5.5 A
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
3
VDS = 8 V
8
6
VDS = 10V
VDS = 15V
4
2
0
0
2
4
6
8
10
1.5
VGS = 4.5V, ID = 5.5 A
1.3
1.1
0.9
VGS = 2.5 V, I D = 5 A
0.7
- 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
0.060
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 5.5 A
TJ = 150 °C
1
TJ = 25 °C
0.1
0.045
TJ = 125 °C
0.030
TJ = 25 °C
0.015
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
8
10
On-Resistance vs. Gate-to-Source Voltage
2.0
10
1.8
8
Power (W)
VGS(th) (V)
Source-Drain Diode Forward Voltage
1.6
ID = 250 μA
1.4
1.2
1.0
- 50
6
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
6
4
2
TA = 25 °C
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
10
100
1000
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
ID - Drain Current (A)
10
100 μs
1 ms
1
10 ms
100 ms
0.1
TC = 25 °C
Single Pulse
10 s, 1 s
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
9
ID - Drain Current (A)
7
5
4
2
0
0
25
50
75
100
125
150
0
25
TC - Case Temperature (°C)
Current Derating a
3.0
1.0
2.5
0.8
Power (W)
Power (W)
2.0
1.5
0.6
0.4
1.0
0.2
0.5
0.0
0.0
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 166 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
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SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
INCHES
Min
Max
Min
Max
A
0.89
1.12
0.035
0.044
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.95 BSC
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
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0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index Return to Index
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