SM2312SRL

B N02B 20V /6A Single N Power MOSFET SM2312SRL 20V /6A Single N Power MOSFET N V General Description DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID 20V /6A Single N Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel infomation SM2312SRL SOT23-3 2312 3000 Parameter 6N02B 20 V 18.9 mΩ 42.0 mΩ 6 A 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 12 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G 9.6 IAR 1.9 EAR 4.4 TA=25°C A A mJ 1.4 PD TA=70°C Junction and Storage Temperature Range 5.0 IDM G Repetitive avalanche energy L=0.1mH 6.0 ID W 0.9 -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead V01 C Steady State 1 www.sourcechips.com RθJA RθJL Typ Max Units 67 101 °C/W 135 162 °C/W 40 64 °C/W STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD IS SM2312SRL 20V /6A Single N Power MOSFET Min Typ Max 20 Units V 1 5 uA ±100 nA 0.8 1.1 V VGS=-10V, ID=6A 18.9 27.0 VGS=4.5V, ID=6A 42.0 55.0 Forward Transconductance VDS=5V, ID=6A 82 Diode Forward Voltage IS=1A,VGS=17V 0.72 0.6 mΩ S 1 V 6 A Typ Max Units 525 640 pF 95 116 pF 75 89 pF 1 Ω Max Units Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 2 tD(on) Turn-On DelayTime 7 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr V01 Body Diode Reverse Recovery Charge Conditions Min Typ 6 VGS=10V, VDS=15V, ID=6A VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 3 1.4 5.6 19.6 nC ns 6.3 IF=-8A, dI/dt=500A/µs 14 ns IF=18A, dI/dt=500A/µs 6 nC 2 www.sourcechips.com 20V /6A Single N Power MOSFET V01 3 www.sourcechips.com SM2312SRL 20V /6A Single N Power MOSFET V01 4 www.sourcechips.com SM2312SRL