TF3414

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3414 TF3414 N-Channel 20-V(D-S) MOSFET V(BR)DSS 20V RDS(on)MAX ID 0.0 30Ω@ 4.5V SOT-23 4.2 A 3 1.GATE 0.040Ω@ 2.5V 2.SOURCE 3.DRAIN 1 2 General FEATURE ●TrenchFET Power MOSFET ●Lead free product is acquired Equivalent Circuit MARKING ●Surface mount package AE9TF w APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter *w：week code Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A TA=25°C B TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C www.sztuofeng.com Maximum 20 Units V ±12 V ID 4.2 IDM 15 PD 1.25 W -55 to 150 °C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL 1 Typ 70 100 63 A Max 90 125 80 Units °C/W °C/W °C/W Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3414 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=16V, VGS=0V 1 µA IGSS Gate-Body leakage current VDS=0V, VGS=±12V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.4 1 V ID(ON) On state drain current VGS=4.5V, VDS=5V 15 RDS(ON) V 0.6 A VGS=4.5V, ID=4.2A 25 30 mΩ VGS=2.5V, ID=3.7A 30 40 mΩ Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current IS 20 VDS=5V, ID=4.2A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=4.2A 8 S 0.76 1.2 V 2 A 436 pF 66 pF 44 pF 3 Ω 6.2 nC 1.6 nC Qgd Gate Drain Charge 0.5 nC tD(on) Turn-On DelayTime 5.5 ns tr Turn-On Rise Time 6.3 ns tD(off) Turn-Off DelayTime 40 ns tf Turn-Off Fall Time VGS=5V, VDS=10V, RL=2.7Ω, RGEN=6Ω 12.7 ns trr Body Diode Reverse Recovery Time IF=4A, dI/dt=100A/µs 12.3 Qrr Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs 3.5 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev4 : June 2005 www.sztuofeng.com 2 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 16 10 8V 4.5V VDS=5V 8 2V 3V 2.5V 8 ID(A) ID (A) 12 6 4 4 VGS=1.5V 125°C 2 25°C 0 0 0 1 2 3 4 5 0 0.5 100 Normalized On-Resistance RDS(ON) (mΩ) 1.5 2 2.5 1.8 VGS=1.8V 80 VGS=2.5V 60 40 VGS=4.5V 20 VGS=2.5 1.6 VGS=1.8V 1.4 ID=4.2A VGS=4.5V 1.2 1 0.8 0 4 8 12 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 100 90 1E+00 ID=4.2A 80 125°C 1E-01 70 IS (A) RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 125°C 60 50 1E-02 25°C 1E-03 25°C 40 1E-04 30 1E-05 20 0 2 4 6 0.0 8 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage www.sztuofeng.com 0.2 3 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 VGS (Volts) Capacitance (pF) VDS=10V ID=4.2A 4 3 2 1 600 Ciss 400 Coss 200 0 0 0 2 4 6 0 8 10.0 10 20 TJ(Max)=150°C TA=25°C 15 20 TJ(Max)=150°C TA=25°C 100µs 15 RDS(ON) limited 10µs 1ms Power (W) ID (Amps) 100.0 5 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 0.1s 10ms 1.0 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 10 5 1s ZθJA Normalized Transient Thermal Resistance Crss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance www.sztuofeng.com 4 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3414 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.sztuofeng.com 5 Feb,2018 V1.0