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TF3407

TF3407

  • 厂商:

    TUOFENG(拓锋)

  • 封装:

    SOT-23

  • 描述:

    类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):4.1A;功率(Pd):1.4W;导通电阻(RDS(on)@Vgs,Id):75mΩ@4.5V,3A;阈值电压(Vgs(th)@Id)...

  • 数据手册
  • 价格&库存
TF3407 数据手册
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF34 07 TF34 07 P-Channel 30-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 0.055Ω@-10V -30V 0.075Ω@-4.5V -4.1A 3 1.GATE 2.SOURCE 1 General FEATURE ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package 3.DRAIN 2 MARKING Equivalent Circuit A79TF w APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter *w:week code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Value Symbol Unit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current ID -4.1 Pulsed Drain Current IDM -20 Maximum Power Dissipation PD 1.4 W R θJA 84 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 Thermal Resistance from Junction to Ambient(t ≤5s) www.sztuofeng.com 1 V A ℃ Mar ,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF34 07 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Static characteristics Drain-source breakdown voltage BVDSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 µA Gate-source leakage current IGSS VGS =±20V, VDS = 0V ±100 nA Drain-source on-resistance (note a) Forward tranconductance (note a) Gate threshold voltage Diode forward voltage (note a) RDS(on) gFS VGS(th) VSD -30 V VGS =-10V, ID =-4.1A 50 55 mΩ VGS =-4.5V, ID =-3A 65 75 mΩ VDS =-5V, ID =-4.1A 5.5 VDS =VGS, ID =-250µA -1 S -1.4 IS=-1A,VGS=0V -3 V -1 V Dynamic characteristics (note b) Input capacitance Ciss 700 pF Output capacitance Coss 120 pF Reverse transfer capacitance Crss 75 pF td(on) 9.0 ns 5.0 ns 28.2 ns 13.5 ns VDS =-15V,VGS =0V,f =1MHz Switching Characteristics (note b) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=3Ω tf Notes: a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b.These parameters have no way to verify. www.sztuofeng.com 2 Mar ,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF34 07 Typical Electrical and Thermal Characteristics ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A) Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) ID- Drain Current (A) Figure 5 Output Characteristics www.sztuofeng.com Figure 6 Drain-Source On-Resistance 3 Mar ,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS ID- Drain Current (A) Normalized On-Resistance TF34 07 TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Figure 11 Gate Charge www.sztuofeng.com Figure 12 Source- Drain Diode Forward 4 Mar ,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS ID- Drain Current (A) TF34 07 Vds Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance www.sztuofeng.com 5 Mar ,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF34 07 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.sztuofeng.com 6 Mar ,2018 V1.0
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