TF3401

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3401 TF3401 P-Channel 30-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 0.060Ω@-10V -30V 0.070Ω@-4.5V 3 -4.0A 1.GATE 2.SOURCE 0.100Ω@-2.5V 1 3.DRAIN 2 MARKING General FEATURE ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package Equivalent Circuit A11TF w APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter *w：week code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Value Symbol Unit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current ID -4.0 Pulsed Drain Current IDM -25 Maximum Power Dissipation PD 1.2 W R θJA 104 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 Thermal Resistance from Junction to Ambient(t ≤5s) www.sztuofeng.com 1 V A ℃ Mar ,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3401 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Static characteristics Drain-source breakdown voltage BVDSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 µA Gate-source leakage current IGSS VGS =±12V, VDS = 0V ±100 nA Drain-source on-resistance (note a) Forward tranconductance (note a) Gate threshold voltage Diode forward voltage (note a) RDS(on) gFS VGS(th) VSD -30 V VGS =-10V, ID =-4.0A 55 60 mΩ VGS =-4.5V, ID =-3.5A 65 70 mΩ VGS =-2.5V, ID =-1.2A 95 100 mΩ VDS =-5V, ID =-4.0A 7 10 VDS =VGS, ID =-250µA -0.6 -1 IS=-1A,VGS=0V S -1.2 V -1.2 V Dynamic characteristics (note b) Input capacitance Ciss 950 pF Output capacitance Coss 115 pF Reverse transfer capacitance Crss 75 pF td(on) 7.0 ns VDS =-15V, VGS = 0 V, f =1MHz Switching Characteristics (note b) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr VGS=-10V,VDS=-15V, 3.0 ns td(off) ID =-4.0A ,RGEN=6Ω 30 ns 12 ns tf Notes: a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b.These parameters have no way to verify. www.sztuofeng.com 2 Mar ,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3401 Typical Electrical and Thermal Characteristics ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms ID- Drain Current (A） PD Power(W) Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) Figure 3 Power Dissipation Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) ID- Drain Current (A) Figure 5 Output Characteristics www.sztuofeng.com Figure 6 Drain-Source On-Resistance 3 Mar ,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS ID- Drain Current (A) Normalized On-Resistance TF3401 TJ-Junction Temperature(℃) Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) C Capacitance (pF) 4.0A Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Vgs Gate-Source Voltage (V) 4.0A Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Figure 11 Gate Charge www.sztuofeng.com Figure 12 Source- Drain Diode Forward 4 Mar ,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS ID- Drain Current (A) TF3401 Vds Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance www.sztuofeng.com 5 Mar ,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3401 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.sztuofeng.com 6 Mar ,2018 V1.0