SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
TF2306
TF2306
N-Channel 30-V(D-S) MOSFET
V(BR)DSS
30V
RDS(on)MAX
ID
0.0 57Ω@ 10V
SOT-23
3.6 A
3
1.GATE
0.094Ω @ 4.5 V
2.SOURCE
3.DRAIN
1
2
General FEATURE
●TrenchFET Power MOSFET
●Lead free product is acquired
●Surface mount package
A69TF w
APPLICATION
●Load Switch for Portable Devices
●DC/DC Converter
*w:week code
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current A
Pulsed Drain Current
TA=25°C
B
Power Dissipation A
TA=25°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
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Equivalent Circuit
MARKING
Maximum
30
Units
V
±20
V
ID
3.6
IDM
15
PD
1.4
W
-55 to 150
°C
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
1
Typ
70
100
63
A
Max
90
125
80
Units
°C/W
°C/W
°C/W
Feb,2018
V1.0
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
TF2306
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
IDSS
Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
1
µA
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
100
nA
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
3
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
15
RDS(ON)
Static Drain-Source On-Resistance
Rg
Gate resistance
A
VGS=4.5V, ID=2.8A
88
11
94
mΩ
VDS=5V, ID=3.6A
0.79
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
1.9
mΩ
IS=1A
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Crss
V
57
VSD
Output Capacitance
Units
50
Forward Transconductance
Coss
Max
VGS=10V, ID=3.6A
gFS
IS
Typ
S
1
V
2.5
A
230
pF
VGS=0V, VDS=15V, f=1MHz
40
pF
VGS=0V, VDS=0V, f=1MHz
17
3
pF
Ω
6
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=15V, ID=3.6A
VGS=4.5V, VDS=10V, ID=3.6A,
RGEN=3Ω
4.0
nC
0.75
nC
0.65
nC
10
50
10
nS
nS
nS
nS
20
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 5 : July 2005
www.sztuofeng.com
2
Feb,2018
V1.0
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
TF2306
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
15
10V
4.5V
8
12
6V
VDS=5V
4V
6
ID(A)
ID (A)
9
3.5V
4
6
125°C
VGS=3V
3
2
0
25°C
0
0
1
2
3
4
1.5
5
2
100
3
3.5
4
4.5
5
Normalized On-Resistance
1.8
90
RDS(ON) (mΩ)
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=4.5V
80
70
60
50
VGS=10V
40
ID=3.6A
1.6
VGS=4.5V
VGS=10V
1.4
1.2
1
0.8
0
2
4
6
8
10
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
200
ID=3.6A
1.0E+00
125°
150
100
IS (A)
RDS(ON) (mΩ)
1.0E-01
125°C
1.0E-02
25°
1.0E-03
50
25°C
1.0E-04
1.0E-05
0
2
4
6
8
0.0
10
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0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3
Feb,2018
V1.0
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
TF2306
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400
10
VDS=15V
ID=3.6A
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
300
200
Coss
Crss
100
2
0
0
0
1
2
3
4
5
6
7
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
20
25
30
20
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
15
10µs
RDS(ON)
limited
100µs
Power (W)
ID (Amps)
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
5
1ms
0.1s 10ms
1.0
10
1s
5
10s
DC
0.1
0.1
1
10
0
0.001
100
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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4
Feb,2018
V1.0
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
TF2306
SOT-23 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
8°
SOT-23 Suggested Pad Layout
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5
Feb,2018
V1.0
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