TF2306

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2306 TF2306 N-Channel 30-V(D-S) MOSFET V(BR)DSS 30V RDS(on)MAX ID 0.0 57Ω@ 10V SOT-23 3.6 A 3 1.GATE 0.094Ω @ 4.5 V 2.SOURCE 3.DRAIN 1 2 General FEATURE ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package A69TF w APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter *w：week code Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current TA=25°C B Power Dissipation A TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C www.sztuofeng.com Equivalent Circuit MARKING Maximum 30 Units V ±20 V ID 3.6 IDM 15 PD 1.4 W -55 to 150 °C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL 1 Typ 70 100 63 A Max 90 125 80 Units °C/W °C/W °C/W Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2306 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V 1 µA IGSS Gate-Body leakage current VDS=0V, VGS=±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 3 V ID(ON) On state drain current VGS=10V, VDS=5V 15 RDS(ON) Static Drain-Source On-Resistance Rg Gate resistance A VGS=4.5V, ID=2.8A 88 11 94 mΩ VDS=5V, ID=3.6A 0.79 DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance 1.9 mΩ IS=1A Diode Forward Voltage Maximum Body-Diode Continuous Current Crss V 57 VSD Output Capacitance Units 50 Forward Transconductance Coss Max VGS=10V, ID=3.6A gFS IS Typ S 1 V 2.5 A 230 pF VGS=0V, VDS=15V, f=1MHz 40 pF VGS=0V, VDS=0V, f=1MHz 17 3 pF Ω 6 SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, ID=3.6A VGS=4.5V, VDS=10V, ID=3.6A, RGEN=3Ω 4.0 nC 0.75 nC 0.65 nC 10 50 10 nS nS nS nS 20 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 5 : July 2005 www.sztuofeng.com 2 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2306 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 10V 4.5V 8 12 6V VDS=5V 4V 6 ID(A) ID (A) 9 3.5V 4 6 125°C VGS=3V 3 2 0 25°C 0 0 1 2 3 4 1.5 5 2 100 3 3.5 4 4.5 5 Normalized On-Resistance 1.8 90 RDS(ON) (mΩ) 2.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=4.5V 80 70 60 50 VGS=10V 40 ID=3.6A 1.6 VGS=4.5V VGS=10V 1.4 1.2 1 0.8 0 2 4 6 8 10 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 200 ID=3.6A 1.0E+00 125° 150 100 IS (A) RDS(ON) (mΩ) 1.0E-01 125°C 1.0E-02 25° 1.0E-03 50 25°C 1.0E-04 1.0E-05 0 2 4 6 8 0.0 10 www.sztuofeng.com 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2306 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 10 VDS=15V ID=3.6A Ciss Capacitance (pF) VGS (Volts) 8 6 4 300 200 Coss Crss 100 2 0 0 0 1 2 3 4 5 6 7 0 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 30 20 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 15 10µs RDS(ON) limited 100µs Power (W) ID (Amps) 10 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 5 1ms 0.1s 10ms 1.0 10 1s 5 10s DC 0.1 0.1 1 10 0 0.001 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance www.sztuofeng.com 4 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2306 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.sztuofeng.com 5 Feb,2018 V1.0