LPSC2301

LPSC2301 Lonten P-channel -20V, -2A, 110mΩ Power MOSFET Description Product Summary These P-Channel enhancement mode power field VDSS -20V effect RDS(on).max@ VGS=-4.5V 110mΩ ID -2A transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy pulse in the avalanche and commutation mode. These devices are well suited Pin Configuration for high efficiency fast switching applications. D Features  -20V,-2A,RDS(ON).max=110mΩ@VGS=-4.5V  Improved dv/dt capability  Fast switching  Green device available G S SOT-23 Applications  PWM applications  Load switch  Portable Equipment Absolute Maximum Ratings P-Channel MOSFET Pb TA = 25°C unless otherwise noted Parameter Drain-Source Voltage Symbol Value Unit VDSS -20 V -2 A -1.4 A Continuous drain current ( TA = 25°C ) ID Continuous drain current ( TA= 100°C ) Pulsed drain current1) IDM -10 A Gate-Source voltage VGSS ±12 V PD 0.78 W TSTG -55 to +150 °C TJ -55 to +150 °C Symbol Value Unit RθJA 160 °C/W Power Dissipation ( TA = 25°C ) Storage Temperature Range Operating Junction Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Version 0.1, 2018 1 www.lonten.cc LPSC2301 Package Marking and Ordering Information Device Device Package Marking LPSC2301 SOT-23 2301 Electrical Characteristics Parameter TJ = 25°C unless otherwise noted Symbol Test Condition Min. Typ. Max. Unit Static characteristics Drain-source breakdown voltage BVDSS VGS=0 V, ID=-250uA -20 --- --- V Gate threshold voltage VGS(th) VDS=VGS, ID=-250uA -0.4 -0.75 -1 V VDS=-20 V, VGS=0 V, TJ = 25°C --- --- -1 μA VDS=-16V, VGS=0 V, TJ = 125°C --- --- -10 μA Drain-source leakage current IDSS Gate leakage current, Forward IGSSF VGS=12 V, VDS=0 V --- --- 100 nA Gate leakage current, Reverse IGSSR VGS=-12 V, VDS=0 V --- --- -100 nA VGS=-4.5 V, ID=-2 A --- 80 110 mΩ VGS=-2.5 V, ID=-1.5 A --- 100 130 mΩ VDS =-5 V , ID=-2A --- 6 --- S --- 406 --- --- 51.7 --- Drain-source on-state resistance Forward transconductance RDS(on) gfs Dynamic characteristics Input capacitance Output capacitance Ciss Coss VDS = -10 V, VGS = 0 V, pF F = 1MHz Reverse transfer capacitance Crss --- 44.1 --- Turn-on delay time td(on) --- 10 --- --- 5.3 --- td(off) --- 32 --- Fall time tf --- 8 --- Gate resistance Rg --- 20 --- --- 1.5 --- --- 1.2 --- --- 8.2 --- Rise time tr VDD = -10V,VGS=-4.5V, ID =-2A Turn-off delay time VGS=0V,VDS=0V,f=1MHz ns Ω Gate charge characteristics Gate to source charge Gate to drain charge Qgs Qgd VDS=-10 V, ID=-2A, nC VGS=-4.5 V Gate charge total Qg Drain-Source diode characteristics and Maximum Ratings Continuous Source Current IS --- --- -2 A Pulsed Source Current2) ISM --- --- -10 A Diode Forward Voltage VSD --- --- -1.2 V VGS=0V, IS=-2A, TJ=25℃ Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature. 2: Pulse Test：Pulse Width ≤300μs, Duty Cycle≤2％. Version 0.1, 2018 2 www.lonten.cc LPSC2301 Electrical Characteristics Diagrams Figure 1. Typ. Output Characteristics Common Source Tc = 25°C Pulse test VGS=2.5V, 3V, 3.5V, 4.5V -ID-Drain current (A) Figure 2. Transfer Characteristics Common Source VDS= -5 V Pulse test -ID -Drain current (A) From Bottom to Top VGS=2V 125°C 25°C VGS=1.5V -VDS -Drain−source voltage (V) Figure 3. Capacitance -VGS -Gate−source voltage (V) Characteristics Figure 4. Gate Charge Waveform Vgs = -4.5V -VGS -Gate-Source Voltage (V) Capacitance (pF) Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss Notes: f = 1 MHz VGS=0 V Coss Vds = -10 V ID = -2 A Crss -VDS -Drain-Source Voltage (V) Total Gate Charge QG (nC) Figure 6. Rdson-Drain Current ON-Resistance Rdson (mohm) -IS -Reverse Drain current (A) Figure 5. Body-Diode Characteristics 125°C 25°C -VSD-Source-Drain Voltage (V) Version 0.1, 2018 VGS = -4.5V VGS = -2.5V -ID-Drain Current (A) 3 www.lonten.cc LPSC2301 Figure 8. Maximum Safe Operating Area Drain current I (A) Normalized On-Resistance Figure 7. Rdson-Junction Temperature(℃) D VGS = -4.5V ID = -2A T -Junction Temperation (°C) Drain-Source Voltage V J DS (V) Normalized Transient θJC Z Thermal Resistance Figure 6. Normalized Maximum Transient Thermal Impedance (RthJA) Pulse Width t (s) Version 0.1, 2018 4 www.lonten.cc LPSC2301 Test Circuit & Waveform Figure 8. Gate Charge Test Circuit & Waveform Figure 9. Resistive Switching Test Circuit & Waveforms Figure 10. Unclamped Inductive Switching (UIS) Test Circuit & Waveform Figure 11. Diode Recovery Circuit & Waveform Version 0.1, 2018 5 www.lonten.cc LPSC2301 Mechanical Dimensions for SOT-23 COMMON DIMENSIONS MILLIMETERS INCHS SYMBOL MIN MAX MIN MAX A 0.95 1.40 0.037 0.055 A1 0.01 0.10 0.000 0.004 b 0.35 0.50 0.014 0.020 c 0.08 0.19 0.003 0.007 D 2.70 3.10 0.106 0.122 E 1.20 1.65 0.047 0.065 E1 2.20 3.00 0.087 0.118 e e1 0.95 TYP. 1.78 2.04 0.037 TYP. 0.070 0.080 Part Number 2301 WW SOT-23 Part Marking Information “WW” Date Code Version 0.1, 2018 6 www.lonten.cc LPSC2301 Disclaimer The content specified herein is for the purpose of introducing LONTEN's products (hereinafter "Products"). The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. LONTEN does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of the Products or technical information described in this document. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). LONTEN shall bear no responsibility in any way for use of any of the Products for the above special purposes. Although LONTEN endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a LONTEN product. The content specified herein is subject to change for improvement without notice. When using a LONTEN product, be sure to obtain the latest specifications. Version 0.1, 2018 7 www.lonten.cc