SM2326NSANC-TRG

SM2326NSAN ® N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/3A, D RDS(ON)= 70mΩ(max.) @ VGS= 4.5V S RDS(ON)= 90mΩ(max.) @ VGS= 2.5V G RDS(ON)= 110mΩ(max.) @ VGS= 1.8V • • Top View of SOT-23N Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) G Applications • • • Power Management in DC/AC Inverter Systems S DC-DC Converter N-Channel MOSFET Load Switch Ordering and Marking Information Package Code AN : SOT-23N Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (3000ea/reel) Assembly Material G : Halogen and Lead Free Device SM2326NS Assembly Material Handling Code Temperature Range Package Code SM2326NS AN : XX - Lot Code A26XX Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - October, 2014 1 www.sinopowersemi.com SM2326NSAN ® Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±8 ID * VGS=4.5V 300µs Pulsed Drain Current 1 150 Maximum Junction Temperature TSTG Storage Temperature Range PD * Maximum Power Dissipation R θJA* A 12 Diode Continuous Forward Current TJ V 3 Continuous Drain Current I DM * IS * Unit °C -55 to 150 TA=25°C 0.83 TA=100°C 0.3 Thermal Resistance-Junction to Ambient W °C/W 150 2 Note: *Surface Mounted on 1in pad area, t ≤ 10 Sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Conditions Min. Typ. Max. Unit 20 - - V - - 1 - - 30 0.5 0.7 1 V nA Static Characteristics BV DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current V GS(th) IGSS RDS(ON) a V GS=0V, IDS=250µA V DS=16V, VGS=0V TJ=85°C µA Gate Threshold Voltage V DS=VGS, IDS=250µA Gate Leakage Current V GS=±8V, V DS=0V - - ±100 V GS=4.5V, IDS=2.5A - 45 70 V GS=2.5V, IDS=2.3A - 60 90 V GS=1.8V, IDS=2A - 75 110 I SD=1A, VGS=0V - 0.75 1.2 V - 10 - ns - 3.2 - nC Drain-Source On-state Resistance mΩ Diode Characteristics a VSD Diode Forward Voltage trr Reverse Recovery Time Q rr Reverse Recovery Charge Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - October, 2014 I SD=1A, dlSD/dt=100A/µs 2 www.sinopowersemi.com SM2326NSAN ® Electrical Characteristics (Cont.) Symbol Parameter Dynamic Characteristics Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance t d(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time VGS =0V, VDS=10V, Frequency=1.0MHz VDD =10V, R L =10Ω, IDS=1A, VGEN =10V, RG =6Ω Turn-off Fall Time Gate Charge Characteristics Qg Test Conditions Min. Typ. Max. - 300 - - 53 - - 47 - - 3.2 - - 11.5 - - 25.5 - - 4 - - 5 - - 0.5 - - 1.7 - Unit b C iss tf (TA = 25°C unless otherwise noted) pF ns b Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=10V, VGS=4.5V, IDS=2.5A nC Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%. Note b : Guaranteed by design, not subject to production testing. Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - October, 2014 3 www.sinopowersemi.com SM2326NSAN ® Typical Operating Characteristics Power Dissipation Drain Current 3.5 1.0 3.0 ID - Drain Current (A) Ptot - Power (W) 0.8 0.6 0.4 2.5 2.0 1.5 1.0 0.2 0.5 o o 0.0 TA=25 C,VG=10V T A=25 C 0 20 40 60 80 0.0 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature Safe Operation Area Thermal Transient Impedance 2 Rd s( on )L im it 10 Normalized Transient Thermal Resistance 50 ID - Drain Current (A) 0 300µs 1 1ms 10ms 0.1 100ms DC o TA=25 C 0.01 0.01 0.1 1 10 Duty = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 Single Pulse 2 0.01 1E-4 100 VDS - Drain - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - October, 2014 1 Mounted on 1in pad o RθJA : 150 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.sinopowersemi.com SM2326NSAN ® Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 120 12 VGS=2,3,4,5,6,7,8,9,10V 1.8V RDS(ON) - On - Resistance (mΩ) ID - Drain Current (A) 10 8 6 1.5V 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 80 VGS=2.5V 60 VGS=4.5V 40 20 3.0 VGS=1.8V 100 0 2 4 6 8 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage IDS=250 µA Normalized Threshold Voltage IDS=2.5A RDS(ON) - On - Resistance (mΩ) 12 1.6 120 100 80 60 40 20 10 0 1 2 3 4 5 6 7 8 9 1.2 1.0 0.8 0.6 0.4 0.2 -50 10 VGS - Gate - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - October, 2014 1.4 -25 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.sinopowersemi.com SM2326NSAN ® Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 1.8 VGS =4.5V 1.6 1.4 IS - Source Current (A) Normalized On Resistance 10 IDS =2.5A 1.2 1.0 0.8 o T j=150 C o T j=25 C 1 0.6 o 0.4 -50 R ON@T j=25 C: 45m Ω -25 0 25 50 75 0.1 0.0 100 125 150 Tj - Junction Temperature (°C) 0.3 420 8 VGS - Gate-source Voltage (V) C - Capacitance (pF) 9 360 Ciss 240 180 120 0 Coss Crss 4 8 12 VDS= 10V IDS= 2.5A 7 6 5 4 3 2 1 0 0 1.5 Gate Charge Frequency=1MHz 60 1.2 10 480 300 0.9 VSD - Source - Drain Voltage (V) Capacitance 540 0.6 16 20 VDS - Drain-Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - October, 2014 0 2 4 6 8 10 12 QG - Gate Charge (nC) 6 www.sinopowersemi.com SM2326NSAN ® Avalanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS IAS RG VDD VDD IL tp EAS 0.01Ω tAV Switching Time Test Circuit and Waveforms VDS RD VDS DUT 90% VGS RG VDD 10% VGS tp td(on) tr Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - October, 2014 7 td(off) tf www.sinopowersemi.com SM2326NSAN ® Package Information SOT-23N D e E E1 SEE VIEW A c b 0.25 L GAUGE PLANE SEATING PLANE 0 A1 A A2 e1 VIEW A S Y M B O L RECOMMENDED LAND PATTERN SOT-23N INCHES MILLIMETERS MIN. MAX. MIN. MAX. A - 1.20 - 0.047 A1 0.00 0.10 0.000 0.004 A2 0.90 1.10 0.035 0.043 b 0.30 0.50 0.012 0.020 c 0.08 0.22 0.003 0.009 D 2.70 3.10 0.106 0.122 E 2.20 2.60 0.086 0.102 E1 1.20 1.40 0.047 0.055 e 0.95 BSC 0.037 BSC e1 1.90 BSC 0.075 BSC 0.8 2.1 0.8 0.95 L 0.30 0.60 0.012 0.024 0 0° 8° 0° 8° UNIT: mm Note : Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil per side. Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - October, 2014 8 www.sinopowersemi.com SM2326NSAN ® Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 A OD1 B B T SECTION A-A SECTION B-B H A d T1 Application A H 178.0±2.00 50 MIN. SOT-23N T1 C d 9.4+2.00 -0.00 6.5+0.50 -0.20 D 1.5 MIN. 20.2 MIN. P0 P1 P2 D0 D1 4.0±0.10 4.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.0 MIN. T W E1 8.0±0.30 1.75±0.10 A0 B0 F 3.5±0.05 K0 0.6+0.00 3.20±0.20 2.77±0.20 1.35±0.20 -0.40 (mm) Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - October, 2014 9 www.sinopowersemi.com SM2326NSAN ® Taping Direction Information SOT-23N USER DIRECTION OF FEED Classification Profile Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - October, 2014 10 www.sinopowersemi.com SM2326NSAN ® Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. Copyright  Sinopower Semiconductor, Inc. Rev. A.4 - October, 2014 11 www.sinopowersemi.com SM2326NSAN ® Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Volume mm Thickness