LPM3406B3F

Preliminary Datasheet LPM3406 30V/3.6A N-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3406 is N-channel logic enhancement mode  30V/3A, RDS(ON)=48mΩ(Typ.)@VGS=4.5V power field effect transistor, which are produced by  30V/3.6A, RDS(ON)=36mΩ(Typ.)@VGS=10V using high cell density, DMOS trench technology.  Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to minimize on-state resistance.  SOT23 Package These devices are particularly suitable for low voltage applications, notebook computer power management and other battery powered circuits where high-side switching is needed. Order Information LPM3406 □ □ □ Applications  Portable Media Players/MP3 players  Cellular and Smart mobile phone  LCD  DSC Sensor  Wireless Card F: Pb-Free Marking Information Package Type B3: SOT23-3 Device Marking Package Shipping LPM3406B3F LPS SOT23 3K/REEL M6YWX Pin Configurations Marking indication: Y:Production year W:Production week X:Production batch (SOT-23) TOP VIEW D Pin Description G D Pin Number Pin Description 1 Gate Pin 2 Source Pin 3 Drain Pin S G S LPM3406-00 May.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 1 of 4 Preliminary Datasheet LPM3406 Absolute Maximum Ratings Absolute Maximum Ratings TA=25℃ Unless Otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V ID 3.6 Continuous Drain Current TA=25℃ TA=70℃ 2.9 Pulsed Drain Current Power Dissipation TA=25℃ IDM 15 PD 1.4 TA=70℃ A W 0.9 Junction and Storage Temperature Range TJ, TSTG -55 to 150 ℃ Thermal Characteristics Parameter Maximum Junction-to-Ambient LPM3406-00 May.-2018 Email: marketing@lowpowersemi.com Symbol Typ. Units RθJA 125 ℃/W www.lowpowersemi.com Page 2 of 4 Preliminary Datasheet LPM3406 Electrical Characteristics Symbol STATIC Parameter Condition Min. ID=250μ A，VGS=0V 30 Typ. Max. Units PARAMETER BVDSS Drain-Source Breakdown Voltage IDSS Zero-Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance V VDS=16V,VGS=0V 1 TJ=55℃ 5 VDS=0V,VGS=±8V 100 nA 2.5 V VDS=VGS,ID=250μA 1 1.8 μA VGS=10V, ID=3.6A 36 TJ=125℃ 58 VGS=4.5V, ID=3A 48 mΩ S gFS Forward Transconductance VDS=5V,ID=3A 11 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current mΩ 1 V 1.5 A DYNAMIC PARAMETERS Ciss Input Capacitance COSS Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS=10V,VGS=0V f = 1MHz VDS=0V,VGS=0V f = 1MHz 180 pF 35 pF 23 pF 3.5 Ω 4.1 nC 0.55 nC 1 nC 4.5 nS SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge t D(ON) Turn-On Delay Time tr Turn-On Rise Time VDS=10V,VGS=5V 1.5 nS t D(OFF) Turn-Off Delay Time RL=2.7Ω 18.5 nS tf Turn-Off Fall Time 15.5 nS trr Body-Diode Reverse Recovery Time IF=3A,d I/dt=100/μS 7.5 nS Qrr Body-Diode Reverse Recovery Charge IF=3A,d I/dt=100/μS 2.5 nC LPM3406-00 May.-2018 VDS=10V,VGS=4.5V ID=3A Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 3 of 4 Preliminary Datasheet LPM3406 Packaging Information LPM3406-00 May.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 4 of 4