SI2309CDS-T1-GE3-VB

SI2309CDS-T1-GE3 www.VBsemi.com P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available - 60 RDS(on) (Ω) VGS = - 10 V 0.04 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single Available RoHS* COMPLIANT S TO-236 (SOT-23) G G 1 3 S D 2 D P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque VGS at - 10 V TC = 25 °C TC = 100 °C SYMBOL LIMIT VDS VGS - 60 ± 20 - 5.2 - 3.8 - 21 0.18 120 - 5.2 2.7 27 - 4.5 - 55 to + 175 300d 10 1.1 ID IDM TC = 25 °C for 10 s 6-32 or M3 screw EAS IAR EAR PD dV/dt TJ, Tstg UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m Notes a. b. c. d. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). VDD = - 25 V, starting TJ = 25 °C, L = 5.0 mH, RG = 25 Ω, IAS = - 5.3 A (see fig. 12). ISD ≤ - 6.7 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. 1.6 mm from case. 服务热线：400-655-8788 1 SI2309CDS-T1-GE3 www.VBsemi.com THERMAL RESISTANCE RATINGS SYMBOL TYP. MAX. Maximum Junction-to-Ambient PARAMETER RthJA - 65 Maximum Junction-to-Case (Drain) RthJC - 5.5 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = - 250 µA - 60 - - V ΔVDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.060 - V/°C VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - - 2.5 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs VDS = - 60 V, VGS = 0 V - - - 100 VDS = - 48 VGS = 0 V, TJ = 150 °C - - - 500 - 0.05 - Ω 1.6 - - S - 270 - - 170 - - 31 - - 12 - ID = - 3.2 Ab VGS = - 10 V VDS = - 25 V, ID = - 3.2 Ab µA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Drain to Sink Capacitance VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 C Total Gate Charge Qg Gate-Source Charge Qgs f = 1.0 MHz VGS = - 10 V ID = - 4.7 A, VDS = - 48 V, see fig. 6 and 13b - - 12 - - 3.8 Gate-Drain Charge Qgd - - 5.1 Turn-On Delay Time td(on) - 11 - - 63 - - 9.6 - - 31 - - 4.5 - - 7.5 - - - - 5.2 - - - 21 - - - 5 .5 Rise Time Turn-Off Delay Time Fall Time tr td(off) VDD = - 30 V, ID = - 4.7 A, RG = 24 Ω, RD= 4.0 Ω, see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D pF nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = - 5.2 A, VGS = 0 Vb TJ = 25 °C, IF = - 4.7 A, dI/dt = 100 A/µsb V - 80 160 ns - 0.096 0.19 µC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. 服务热线：400-655-8788 2 SI2309CDS-T1-GE3 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC= 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC= 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature 服务热线：400-655-8788 3 SI2309CDS-T1-GE3 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.VBsemi.com Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 服务热线：400-655-8788 4 SI2309CDS-T1-GE3 www.VBsemi.com RD VDS VGS D.U.T. RG +VDD - 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit td(on) td(off) tf tr VGS 10 % 90 % VDS Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS IAS VDS D.U.T. RG VDS + V DD VDD IAS tp - 10 V tp 0.01 Ω VDS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 服务热线：400-655-8788 5 SI2309CDS-T1-GE3 www.VBsemi.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG - 10 V 12 V 0.2 µF 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit 服务热线：400-655-8788 6 SI2309CDS-T1-GE3 www.VBsemi.com Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test + - VDD Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % * ISD VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel 服务热线：400-655-8788 7 SI2309CDS-T1-GE3 www.VBsemi.com SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C 0.25 mm q Gauge Plane Seating Plane Seating Plane C A1 Dim L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 8 服务热线：400-655-8788 SI2309CDS-T1-GE3 www.VBsemi.com 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 9 SI2309CDS-T1-GE3 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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