M28S

UMW M28S R UMW M28S SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT–23 FEATURES  Excellent hFE Linearity  High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage 1. BASE Value Unit 40 V 3. COLLECTOR VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current 1 A PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 2. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA, IC=0 6 V Collector cut-off current ICBO VCB=35V, IE=0 0.1 µA Collector cut-off current ICEO VCE=20V, IB=0 5 µA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 µA hFE(1) VCE=1V, IC=1mA 290 hFE(2) VCE=1V, IC=100mA 300 hFE(3) VCE=1V, IC=300mA 300 hFE(4) VCE=1V, IC=500mA 300 DC current gain Collector-emitter saturation voltage VCE(sat) fT Transition frequency Collector output capacitance Cob 1000 IC=600mA, IB=20mA 0.55 VCE=10V,IE=50mA, f=1MHz VCB=10V, IE=0, f=1MHz 100 V MHz 9 pF CLASSIFICATION OF hFE(2) RANK B C D RANGE 300–550 500–700 650–1000 MARKING www.umw-ic.com 28S 1 友台半导体有限公司 UMW R UMW M28S SOT-23 Plastic-Encapsulate Transistors Static Characteristic hFE 160 hFE 180uA 120 140uA 100 120uA 80 100uA 60 80uA 60uA 40 Ta=100℃ 1000 DC CURRENT GAIN 160uA IC (mA) COMMON EMITTER Ta=25℃ 200uA 140 COLLECTOR CURRENT IC —— 2000 Ta=25℃ 40uA 20 IB=20uA 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 1 Ta=100℃ Ta=25℃ 10 100 COLLECTOR CURRENT VBE 1000 IC 1000 IC 1000 (mA) IC —— Ta=25℃ Ta=100℃ β=30 β=30 1 1 VBEsat 2000 100 10 100 COLLECTOR CURRENT IC —— 10 (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 1000 VCE VCE=1V 100 5 100 1000 1 10 (mA) 100 COLLECTOR CURRENT —— IC Cob/ Cib 1000 1000 (mA) IC —— VCB/ VEB f=1MHz IE=0/IC=0 (pF) CAPACITANCE COLLCETOR CURRENT 10 Ta=25℃ VCE=1V 0.3 0.4 0.5 0.6 0.7 BASE-EMMITER VOLTAGE fT —— VBE 0.8 0.9 10 Cob 1 0.1 1.0 1 (V) 10 REVERSE VOLTAGE IC PC 250 COLLECTOR POWER DISSIPATION PC (mW) (MHz) 1000 fT Cib 1 0.1 0.2 TRANSITION FREQUENCY 100 C Ta=100℃ IC (mA) Ta=25℃ 100 100 10 —— V 20 (V) Ta 200 150 100 50 VCE=10V Ta=25℃ 1 0 1 10 COLLECTOR CURRENT www.umw-ic.com 100 IC 0 (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW M28S SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 3 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司