HSS2305A

HSS2305A P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS2305A is the high cell density trenched Pch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck VDS -20 V RDS(ON),max 45 mΩ ID -4.9 A converter applications. The HSS2305A meet the RoHS and Green Product requirement with full function reliability approved. l l l l Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology SOT 23s Pin Configurations Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ID@TA=25℃ Continuous Drain Current, VGS @ -4.5V 1 ID@TA=70℃ Continuous Drain Current, VGS @ -4.5V 1 IDM V -4.9 A -3.9 A 2 -14 A Total Power Dissipation 3 1.31 W PD@TA=70℃ Total Power Dissipation 3 0.84 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ PD@TA=25℃ Pulsed Drain Current ±12 Thermal Data Symbol RθJA RθJA www.hs-semi.cn Parameter Thermal Resistance Junction-Ambient 1 1 Thermal Resistance Junction-Ambient (t ≤10s) Ver 2.0 Typ. Max. Unit --- 120 ℃/W --- 95 ℃/W 1 HSS2305A P-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage 2 Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.014 --- V/℃ VGS=-4.5V , ID=-4.9A --- 40 45 VGS=-2.5V , ID=-3.4A --- 50 60 VGS=-1.8V , ID=-2A mΩ --- 65 85 -0.4 --- -1.0 V --- 3.95 --- mV/℃ VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 12.8 --- S Qg Total Gate Charge (-4.5V) --- 10.2 14.3 Qgs Gate-Source Charge --- 1.89 2.6 Qgd Gate-Drain Charge --- 3.1 4.3 VDS=-15V , VGS=-4.5V , ID=-3A uA nC --- 5.6 11.2 Rise Time VDD=-10V , VGS=-4.5V , --- 40.8 73 Turn-Off Delay Time RG=3.3Ω, ID=-3A --- 33.6 67 Fall Time --- 18 36 Ciss Input Capacitance --- 857 1200 Coss Output Capacitance --- 114 160 Crss Reverse Transfer Capacitance --- 108 151 Min. Typ. Max. Unit --- --- -4.9 A --- --- -14 A VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM Parameter Continuous Source Current Pulsed Source Current 2,4 2 Conditions 1,4 VG=VD=0V , Force Current VSD Diode Forward Voltage trr Reverse Recovery Time IF=-3A , di/dt=100A/µs , --- 21.8 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 6.9 --- nC Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSS2305A P-Ch 20V Fast Switching MOSFETs Typical Characteristics 100 -ID=3A RDSON (mΩ) 80 60 40 1 2 3 -VGS (V) 4 5 Fig.2 On-Resistance vs. G-S Voltage Fig.1 Typical Output Characteristics -IS Source Current(A) 4 3 TJ=150℃ TJ=25℃ 2 1 0 0 0.2 0.4 0.6 0.8 -VSD , Source-to-Drain Voltage (V) 1 Fig.3 Forward Characteristics of Reverse Fig.4 Gate-charge Characteristics 1.8 Normalized On Resistance 1.8 Normalized VGS(th) 1.4 1 0.6 1.4 1.0 0.6 0.2 0.2 -50 0 50 100 TJ ,Junction Temperature (℃ ) -50 150 Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized R DSON vs. TJ Ver 2.0 3 HSS2305A P-Ch 20V Fast Switching MOSFETs 1000 100.00 Ciss 100us 10ms -ID (A) C (pF) 10.00 Coss 100 100ms 1.00 Crss 1s 0.10 DC TA=25℃ Single Pulse F=1.0MHz 10 0.01 1 5 9 13 17 -VDS (V) 21 0.1 Fig.7 Capacitance 1 10 -VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TC + PDM x RθJC 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Gate Charge Waveform Ver 2.0 4 HSS2305A P-Ch 20V Fast Switching MOSFETs Ordering Information Part Number HSS2305A www.hs-semi.cn Package code SOT-23 Ver 2.0 Packaging 3000/Tape&Reel 5