HSS2N7002K

HSS2N7002K N-Ch 60V Fast Switching MOSFETs Product Summary Description We declare that the material of product compliance with Rohs requirements and Halogen Free. ESD protected Low RDS(on) VDS 60 V RDS(ON),max 2 Ω ID 0.3 A SOT23 Pin Configuration l l l l Low side load switch Level shift circutis DC-DC converter Portable applications i.e. DSC, PDA, Cell Phone, etc. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ ±20 V Continuous Drain Current, VGS @ 10V 1 300 mA Continuous Drain Current, VGS @ 10V 1 190 mA 2 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 1 A 0.35 W TSTG Storage Temperature Range -40 to 150 ℃ TJ Operating Junction Temperature Range -40 to 150 ℃ 3 Thermal Data Symbol RθJA www.hs-semi.cn Parameter Thermal Resistance Junction-Ambient Ver 2.0 1 Typ. Max. Unit --- 350 ℃/W 1 HSS2N7002K N-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage 2 Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V Reference to 25℃ , ID=1mA --- 0.054 --- V/℃ VGS=10V , ID=200mA --- --- 2 VGS=4.5V , ID=100mA --- --- 3 1.2 --- 2.5 V --- -4.96 --- mV/℃ VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA Ω △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±16V , VDS=0V --- --- ±30 uA gfs Forward Transconductance VDS=50V , ID=200mA --- 0.18 --- S Qg Total Gate Charge (4.5V) --- 1.0 --- Qgs Gate-Source Charge --- 0.4 --- Qgd Gate-Drain Charge --- 1 --- Turn-On Delay Time --- 2.7 --- Td(on) VDS=0.5V , VGS=10V , ID=200mA uA nC Rise Time VDD=30V , VGEN=10V , RG=25Ω, --- 2.5 --- Turn-Off Delay Time ID=500mA, RL=60Ω, --- 13 --- Fall Time --- 8 --- Ciss Input Capacitance --- 38 --- Coss Output Capacitance --- 5 --- Crss Reverse Transfer Capacitance --- 2 --- Min. Typ. Max. Unit --- --- 300 mA --- --- 1 A --- --- 0.85 V Tr Td(off) Tf VDS=25V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,4 Continuous Source Current Pulsed Source Current 2,4 Diode Forward Voltage 2 VG=VD=0V , Force Current VGS=0V , IS=0.5A , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature. 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSS2N7002K N-Ch 60V Fast Switching MOSFETs Typical Characteristics www.hs-semi.cn Ver 2.0 3 HSS2N7002K N-Ch 60V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 4 HSS2N7002K N-Ch 60V Fast Switching MOSFETs Ordering Information Part Number HSS2N7002K www.hs-semi.cn Package code SOT-23 Ver 2.0 Packaging 3000/Tape&Reel 5