HSS2300A

HSS2300A N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS2300A is the high cell density trenched Nch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The HSS2300A meet the RoHS and Green Product VDS 20 V RDS(ON),max 26 mΩ ID 6 A requirement with full function reliability approved. l l l l SOT23 Pin Configuration Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ IDM ±12 V Continuous Drain Current, VGS @ 4.5V 1 6.0 A Continuous Drain Current, VGS @ 4.5V 1 5.0 A 17 A 1 W Pulsed Drain Current 2 Total Power Dissipation 3 PD@TA=70℃ Total Power Dissipation 3 0.66 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ PD@TA=25℃ Thermal Data Symbol RθJA www.hs-semi.cn Parameter Thermal Resistance Junction-ambient Ver 2.0 1 Max. Unit 120 ℃/W 1 HSS2300A N-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) △VGS(th) Static Drain-Source On-Resistance Gate Threshold Voltage VGS(th) Temperature Coefficient 2 Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.018 --- V/℃ VGS=4.5V , ID=4A --- 21 26 VGS=2.5V , ID=3A --- 28 35 VGS=1.8V , ID=2A --- 40 50 0.35 --- 1.0 V mV/℃ VGS=VDS , ID =250uA --- -3.1 --- VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 mΩ IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=4A --- 30 --- S Qg Total Gate Charge (4.5V) --- 8.6 --- Qgs Gate-Source Charge --- 1.37 --- Qgd Gate-Drain Charge --- 2.3 --- VDS=15V , VGS=4.5V , ID=4A uA nC --- 5.2 --- Rise Time VDS=10V , VGS=4.5V , RG=3.3Ω --- 34 --- Turn-Off Delay Time ID=4A --- 23 --- Fall Time --- 9.2 --- Ciss Input Capacitance --- 670 --- Coss Output Capacitance --- 75 --- Crss Reverse Transfer Capacitance --- 68 --- Min. Typ. Max. Unit --- --- 6 A --- --- 17 A --- --- 1.2 V Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,4 Continuous Source Current Pulsed Source Current 2,4 Diode Forward Voltage 2 VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSS2300A N-Ch 20V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 3 HSS2300A N-Ch 20V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 4 HSS2300A N-Ch 20V Fast Switching MOSFETs Ordering Information Part Number HSS2300A www.hs-semi.cn Package code SOT-23 Ver 2.0 Packaging 3000/Tape&Reel 5