IRLML5203

IRLML5203 P-Ch 30V Fast Switching MOSFETs Description Product Summary The IRLML5203 is the high cell density trenched Pch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The IRLML5203 meet the RoHS and Green Product requirement with full function reliability approved. VDS -30 V RDS(ON),typ 43 mΩ ID -3.2 A SOT23s Pin Configuration ⚫ ⚫ ⚫ ⚫ Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ -10V1 -3.6 -3.2 A ID@TA=70℃ Continuous Drain Current, VGS @ -10V1 -2.9 -2.5 A IDM Pulsed Drain Current2 PD@TA=25℃ Total Power Dissipation3 1.32 1 W PD@TA=70℃ Total Power Dissipation3 0.84 0.64 W 10s Steady State -13 Units A TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA RθJA RθJC www.hs-semi.cn Typ. Max. Unit Thermal Resistance Junction-ambient 1 --- 125 ℃/W Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 95 ℃/W Thermal Resistance Junction-Case1 --- 80 ℃/W Ver 2.0 1 IRLML5203 P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.02 --- V/℃ VGS=-10V , ID=-3A --- 43 60 VGS=-4.5V , ID=-1.5A --- 63 90 -1 -1.5 -3 V --- 4.32 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA m uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 4.8 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 24 48  Qg Total Gate Charge (-4.5V) --- 5.22 7.3 --- 1.25 1.8 VDS=-20V , VGS=-4.5V , ID=-3A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 2.3 3.2 Turn-On Delay Time --- 18.4 37 Td(on) nC Rise Time VDD=-15V , VGS=-10V , RG=3.3 --- 11.4 21 Turn-Off Delay Time ID=-1A --- 39.4 79 Fall Time --- 5.2 10.4 Ciss Input Capacitance --- 463 650 Coss Output Capacitance --- 82 115 Crss Reverse Transfer Capacitance --- 68 95 Min. Typ. Max. Unit --- --- -3.2 A --- --- -13 A --- --- -1 V Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current1,4 ISM Pulsed Source Current2,4 VSD Diode Forward Voltage2 Conditions VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 IRLML5203 P-Ch 30V Fast Switching MOSFETs Typical Characteristics 14 135.0 VGS=-7V 10 115.0 VGS=-5V 8 RDSON (mΩ) -ID Drain Current (A) ID= -3A VGS=-10V 12 VGS=-4.5V 6 VGS=-3V 4 95.0 75.0 2 0 55.0 0 0.5 1 1.5 2 2.5 3 3.5 4 -VDS , Drain-to-Source Voltage (V) 4.5 5 2 Fig.1 Typical Output Characteristics 4 6 -VGS (V) 8 10 Fig.2 On-Resistance vs. G-S Voltage 10 10 -VGS Gate to Source Voltage (V) -IS Source Current(A) VDS=-20V 7.5 5 TJ=150℃ TJ=25℃ 2.5 0 0 0.3 0.6 0.9 ID=-3A 8 6 4 2 0 1.2 0 -VSD , Source-to-Drain Voltage (V) 7.5 10 Fig.4 Gate-Charge Characteristics diode 2.0 Normalized On Resistance Normalized VGS(th) 5 QG , Total Gate Charge (nC) Fig.3 Forward Characteristics of Reverse 1.5 2.5 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature (℃ ) -50 150 Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Ver 2.0 3 IRLML5203 P-Ch 30V Fast Switching MOSFETs 1000 100.00 F=1.0MHz 100us 10.00 -ID (A) Capacitance (pF) Ciss 100 Coss 10ms 1.00 100ms Crss 1s 0.10 TA=25℃ Single Pulse 10 DC 0.01 1 5 9 13 17 21 25 0.1 1 Fig.7 Capacitance 10 -VDS (V) -VDS , Drain to Source Voltage (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TA + PDM x RθJA 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform waveform www.hs-semi.cn Ver 2.0 4 IRLML5203 P-Ch 30V Fast Switching MOSFETs Ordering Information Part Number IRLML5203 www.hs-semi.cn Package code SOT-23 Ver 2.0 Packaging 3000/Tape&Reel 5