HSS2302B

HSS2302B N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS2302B is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The HSS2302B meets the RoHS and Green Product requirement with full function reliability approved. VDS 20 V RDS(ON),typ 46 mΩ ID 3 A SOT23S Pin Configuration ⚫ ⚫ ⚫ ⚫ Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID@TA=25℃ Continuous Drain Current, VGS @ 4.5V1 3 A ID@TA=70℃ Continuous Drain Current, VGS @ 4.5V1 2.2 A IDM Pulsed Drain Current2 10 A PD@TA=25℃ Total Power Dissipation3 0.71 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA RθJC www.hs-semi.cn Typ. Max. Unit Thermal Resistance Junction-ambient 1 --- 120 ℃/W Thermal Resistance Junction-Case1 --- 65 ℃/W Ver 2.1 1 HSS2302B N-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) IDSS Gate Threshold Voltage Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V VGS=4.5V , ID=2.5A --- 46 60 VGS=2.5V , ID=1A --- 61 85 VGS=VDS , ID =250uA 0.5 0.65 1.0 VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 m V uA IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=2A --- 5 --- S Qg Total Gate Charge (4.5V) --- 3.5 --- Qgs Gate-Source Charge --- 0.6 --- Qgd Gate-Drain Charge --- 0.45 --- VDS=10V , VGS=4.5V , ID=2.5A nC --- 8 --- Rise Time VDD=10V , VGS=4.5V , RG=6 --- 7 --- Turn-Off Delay Time ID=2.5A --- 30 --- Fall Time --- 7 --- Ciss Input Capacitance --- 180 --- Coss Output Capacitance --- 39 --- Crss Reverse Transfer Capacitance --- 20 --- Min. Typ. Max. Unit Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=10V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Conditions Continuous Source Current1,4 VG=VD=0V , Force Current --- --- 3 A Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.1 2 HSS2302B N-Ch 20V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 5 IS Source Current(A) 4 3 2 TJ=150℃ TJ=25℃ 1 0 0 0.3 0.6 0.9 1.2 VSD , Source-to-Drain Voltage (V) Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Ver 2.1 3 HSS2302B N-Ch 20V Fast Switching MOSFETs 1000 F=1.0MHz Capacitance (pF) Ciss 100 Coss Crss 10 1 5 9 13 17 21 VDS , Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TC + PDM x RθJC 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance VDS 90% 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Gate Charge Waveform Ver 2.1 4 HSS2302B N-Ch 20V Fast Switching MOSFETs Ordering Information Part Number HSS2302B www.hs-semi.cn Package code SOT-23 Ver 2.1 Packaging 3000/Tape&Reel 5