AO3416

AO3416 N-Ch 20V Fast Switching MOSFETs Description Product Summary The AO3416 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The AO3416 meet the RoHS and Green Product requirement with full function reliability approved. VDS 20 V RDS(ON),TYP 18 mΩ ID 6 A ⚫ ⚫ ⚫ ⚫ SOT23 Pin Configuration ⚫ Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology ESD Protected 2KV Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ ±8 V Continuous Drain Current, VGS @ 4.5V1 6 A Continuous Drain Current, VGS @ 4.5V1 5.2 A Current2 30 A PD@TA=25℃ Total Power Dissipation3 0.72 W PD@TA=70℃ Total Power Dissipation3 0.46 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ IDM Pulsed Drain Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-ambient 1 145 ℃/W www.hs-semi.cn Ver 2.0 1 AO3416 N-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.018 --- V/℃ VGS=4.5V , ID=6A --- 15 22 VGS=2.5V , ID=5A --- 18 26 0.5 0.7 1.2 V --- -3.1 --- mV/℃ VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA m uA IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±10 uA gfs Forward Transconductance VDS=5V , ID=7A --- 50 --- S Qg Total Gate Charge (4.5V) --- 10.6 --- Qgs Gate-Source Charge --- 4.2 --- Qgd Gate-Drain Charge --- 2.6 --- Td(on) Turn-On Delay Time --- 280 --- VDS=10V , VGS=4.5V , ID=4A nC Rise Time VDS=10V , VGS=4.5V , RG=3.3 --- 340 --- Turn-Off Delay Time ID=4A --- 3.76 --- Fall Time --- 2.24 --- Ciss Input Capacitance --- 1300 --- Coss Output Capacitance --- 175 --- Crss Reverse Transfer Capacitance --- 88 --- Min. Typ. Max. Unit --- --- 1.2 V Tr Td(off) Tf VDS=10V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol VSD Parameter Diode Forward Voltage2 Conditions VGS=0V , IS=1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 AO3416 N-Ch 20V Fast Switching MOSFETs Typical Characteristics www.hs-semi.cn Ver 2.0 3 AO3416 N-Ch 20V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 4 AO3416 N-Ch 20V Fast Switching MOSFETs Ordering Information Part Number AO3416 www.hs-semi.cn Package code SOT-23 Ver 2.0 Packaging 3000/Tape&Reel 5