SL4041

SL4041 P-Ch MOSFET Product Summery General Description The SL4041 is the highest performance trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -40V 30mΩ -6A Applications The SL4041 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter. z Networking DC-DC Power System z Load Switch Features SOT-23-3L Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage -40 V Gate-Source Voltage ±20 V 1 -6.0 A 1 -4.5 A -24 A 12 mJ Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy IAS Avalanche Current -7 A W PD@TC=25℃ Total Power Dissipation 1.4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ 4 Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC 1 www.slkormicro.com Thermal Resistance Junction-Case 1 1 Typ. Max. Unit --- 125 ℃/W --- 36 ℃/W SL4041 Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) △VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -40 --- --- V Reference to 25℃ , ID=-1mA --- -0.03 --- V/℃ VGS=-10V , ID=-3A --- 30 40 VGS=-4.5V , ID=-1A --- 40 58 -0.8 -1.2 -2.2 V --- 4.56 --- mV/℃ VDS=-28V , VGS=0V , TJ=25℃ --- --- 1 VDS=-28V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA VGS(th) Temperature Coefficient mΩ uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 15 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3.8 --- Ω Qg Total Gate Charge (-4.5V) --- 9.5 --- Qgs Gate-Source Charge --- 1.7 --- Qgd Gate-Drain Charge --- 2.0 ----- VDS=-18V , VGS=-10V , ID=-4A nC --- 8 Rise Time VDD=-15V , VGS=-10V , --- 10 --- Turn-Off Delay Time RG=6Ω, ID=-1A , RL=15Ω --- 18 --- Fall Time --- 8 --- Ciss Input Capacitance --- 420 --- Coss Output Capacitance --- 77 --- Crss Reverse Transfer Capacitance --- 55 --- Min. Typ. Max. Unit 10 --- --- mJ Min. Typ. Unit Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.1mH , IAS=-8A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ --- --- Max. -1.0 --- --- -16 A --- --- -1.2 V Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-8A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.slkormicro.com 2 A SL4041 Typical Characteristics 160 12 10 120 8 RDSON (mΩ) -ID Drain Current (A) ID=-3A VGS=-3V 6 VGS=-10V 4 80 VGS=-7V VGS=-5V 2 VGS=-4.5V 0 40 0 0.5 1 1.5 -VDS , Drain-to-Source Voltage (V) 2 2 4 Fig.1 Typical Output Characteristics 6 -VGS (V) 8 10 Fig.2 On-Resistance v.s Gate-Source 12 10 ID=-3A -VGS Gate to Source Voltage (V) -IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 8 6 4 2 0 0 1 -VSD , Source-to-Drain Voltage (V) 10 15 20 25 QG , Total Gate Charge (nC) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics 2.5 Normalized On Resistance 1.5 Normalized VGS(th) (V) 5 2.0 1 1.5 0.5 1.0 0.5 0 -50 0 50 o 100 TJ ,Junction Temperature ( C) -50 150 50 100 Fig.6 Normalized RDSON v.s TJ Fig.5 Normalized VGS(th) v.s TJ www.slkormicro.com 0 TJ , Junction Temperature (℃) 3 150 SL4041 10000 100.00 F=1.0MHz Capacitance (pF) Ciss 10.00 -ID (A) 1000 1.00 100us 0.10 1ms 10ms 100ms DC Coss 100 Crss o Tc=25 C Single Pulse 0.01 10 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 0.1 25 Fig.7 Capacitance 1 10 100 -VDS (V) 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 P DM T ON T 0.02 D = TON/T TJpeak = TC+P DMXRθJC 0.01 SINGLE 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.slkormicro.com Fig.11 Unclamped Inductive Waveform 4 10