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KY2004K

KY2004K

  • 厂商:

    KY(韩景元)

  • 封装:

    SOT-23

  • 描述:

    类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):660mA;功率(Pd):350mW;导通电阻(RDS(on)@Vgs,Id):380mΩ@4.5V,0.5A;

  • 数据手册
  • 价格&库存
KY2004K 数据手册
ShenZhen HanKingYuan Electronic Co.,Ltd K Y 2004K 20V P-Channel Mosfet SOT-23 FEATURES ● RDS(ON) ≤ 520mΩ( 380mΩ Typ.) @VGS=-4.5V ● RDS(ON) ≤ 700mΩ( 480mΩ Typ.) @VGS=-2.5V ● RDS(ON) ≤ 1000mΩ( 600mΩ Typ.) @VGS=-1.8V APPLICATIONS ● Load/Power Switching ● Interfacing, Logic Switching ● Battery Management for Ultra Small Portable Electronics P-CHANNEL MOSFET MARKING 04K MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±10 V ID Continuous Drain Current -0.66 A IDM Pulsed Drain Current -1.2 A PD Power Dissipation 0.35 W Thermal Resistance from Junction to Ambient 417 ℃/W TJ Junction Temperature 150 ℃ TSTG Storage Temperature -55~ +150 ℃ RθJA www.scr-ky.com 1/4 ShenZhen HanKingYuan Electronic Co.,Ltd K Y 2004K MOSFET ELECTRICAL CHARACTERISTICS Ta=25 °C unless otherwise specified Parameter Symbol bol Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V,ID = -250μA -20 - - V IDSS Zero Gate Voltage Drain Current VDS = -20V, VGS = 0V, TJ = 25℃ - - -1 μA IGSS Gate to Body Leakage Current VGS = ±10V,VDS = 0V - - ±10 uA VDS =VGS,ID = -250μA -0.35 -0.65 -1 V VGS =-4.5V, ID =-0.5A - 380 520 VGS =-2.5V, ID =-0.2A - 480 700 VGS =-1.8V, ID =-0.1A - 600 1000 - 113 - pF - 15 - pF 9 - pF - 9 - ns - 5.7 - ns - 32.6 - ns - 20.3 - ns - - -1.2 V On Characteristics VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source On-Resistance note1 Dynamic Characteristics mΩ note2 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS =-16V, VGS = 0V f = 1.0MHz Switching Characteristics note2 td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf VGS = -4.5V, VDS=-10V RG =10Ω, ID=-0.2A Turn-Off Fall Time Drain-Source Diode Characteristics and Maximum Ratings Drain to Source Diode Forward VGS = 0V, ISD= -0.5A VSD Voltage TJ = 25℃ Notes: 1. Pulse Test: Pulse width < 300μs, Duty Cycle ≤ 2% 2 . Guaranteed by design, not subject to production testing www.scr-ky.com 2/4 ShenZhen HanKingYuan Electronic Co.,Ltd TYPICAL PERFORMANCE CHARACTERISTICS www.scr-ky.com K Y 2004K 3/4 ShenZhen HanKingYuan Electronic Co.,Ltd K Y 2004K SOT-23 PACKAGE OUTLINE DRAWING Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 0.950 TYP 1.800 L 0.037 TYP 2.000 0.071 0.550 REF 0.022 REF L1 0.300 0.500 0.012 θ 0° 8° 0° www.scr-ky.com 0.079 0.020 8° 4/4
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