WM02P30M

WM02P30M P-Channel Enhancement MOSFET Features    Way-on Small Signal MOSFETs VDS = -20V, ID = -3A RDS(ON) < 70mΩ @ VGS = -4.5V RDS(ON) < 90mΩ @ VGS = -2.5V Trench LV MOSFET Technology Mechanical Characteristics  SOT-23 Package  Marking : Making Code  RoHS Compliant Schematic & PIN Configuration Absolute Maximum Rating (TA=25°C unless otherwise noted) Rating Symbol Value Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V ID -3 A IDM -10 A PD 1 W TJ ,TSTG -55 to 150 °C Symbol Value Units RθJA 125 °C/W Continuous Drain Current TA = 25°C Pulsed Drain Current1 Power Dissipation TA = 25°C Operating Junction and Storage Temperature Range Thermal Characteristics Rating Thermal Resistance from Junction to Ambient 2 Rev.E,2021 Doc:W0803060 1/5 WM02P30M Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Units Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS= 0V, ID= -250μA -20 - - V Zero Gate Voltage Drain Current IDSS VDS= -20V, VGS= 0V - - -1 μA Gate-Source Leakage IGSS VDS= 0V, VGS= ±12V - - ±100 nA Gate-Source Threshold Voltage VGS(th) VDS= VGS, ID= -250μA -0.4 - -1 V Drain-Source on-State Resistance3 RDS(on) VGS= -4.5V, ID= -3.0A - 50 70 VGS= -2.5V, ID= -2.0A - 60 90 - 616 - - 75 - mΩ Dynamic Characteristics4 Input Capacitance Ciss VGS = 0V, VDS = -10V, Output Capacitance Coss Reverse Transfer Capacitance Crss - 65 - Total gate charge Qg - 3.3 - Gate-source charge Qgs - 0.7 - Gate-drain charge Qgd - 1.3 - Turn-on Time td(on) - 11 - - 35 - - 30 - - 10 - - - -1.2 V - - -3 A f=1.0MHz pF Switching Characteristics4 Rise Time Turn-off Time Fall Time VGS= -2.5V, VDS= -10V, ID= -3A tr VGS= -4.5V, VDD= -10V, td(off) RL= 10Ω, RGEN= 1Ω tf nC ns Source-Drain Diode Characteristics Body Diode Voltage3 Continuous Source Current VSD IS= -1A, VGS= 0V IS Notes: 1. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. 2. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, The value in any given application depends on the user's specific board design. 3. Pulse Test: Pulse width≤300μs, duty cycle≤2%. 4. This value is guaranteed by design hence it is not included in the production test. Rev.E,2021 www.way-on.com 2/5 WM02P30M Typical Characteristics 10 VDS= -3V Drain current -ID (A) 8 6 4 2 0 0 Figure 1. Output Characteristics Source current -IS (A) On-Resistance RDS (on) (mΩ) 0.2 0.4 0.6 0.8 2 2.5 1.0 ID= -3A 250 200 150 100 50 0 1.2 Source−drain voltage -VSD (V) 1 Figure 3. Forward Characteristics of Reverse 2 3 5 4 Gate−source voltage -VGS (V) Figure 4. RDS(ON) vs. VGS 2.0 Normalized RDS (on) 120 On-Resistance RDS (on) (mΩ) 1.5 300 1 80 VGS = -2.5V VGS = -4.5V 40 0 1 Figure 2. Transfer Characteristics 10 0.1 0.5 Gate−source voltage -VGS (V) 0 1 2 3 Drain current ID (A) Figure 5. RDS(ON) vs. ID Rev.E,2021 4 5 1.5 1.0 0.5 -50 -25 0 25 50 75 Temperature Tj(°C) 100 125 150 Figure 6. Normalized RDS(on) vs. Temperature www.way-on.com 3/5 WM02P30M 100000 Capacitance（pF） 10000 1000 Ciss 100 Coss Crss 10 F=1.0MHz 1 0 5 10 15 Drain-source voltage -VDS（V） 20 Figure 7. Capacitance Characteristics Rev.E,2021 Figure 8. Gate Charge Characteristics www.way-on.com 4/5 WM02P30M Outline Drawing – SOT-23 3 PACKAGE OUTLINE 1 2 SOT-23 D b DIMENSIONS 3 1 SYMBOL 0.25 E1 E θ 2 L c e e1 A MIN MAX A 0.90 1.15 0.035 0.045 A1 0.00 0.10 0.000 0.004 b 0.30 0.50 0.012 0.020 c 0.08 0.15 0.003 0.006 D 2.80 3.00 0.110 0.118 E 2.25 2.55 0.089 0.100 E1 1.20 1.40 0.047 0.055 e 0.95 BSC 1.80 L θ b C e e1 0.037BSC 2.00 0.071 0.55REF 0 。 0.079 0.022REF 8 。 0 。 8 。 Notes DIMENSIONS M INCHES MAX e1 A1 Z MILLIMETER MIN DIM INCHES MILLIMETERS M 0.080 2.02 C 0.032 0.80 Z 0.111 2.82 e 0.037 BSC 0.95 BSC e1 0.075 BSC 1.90 BSC b 0.032 0.80 1. Dimensioning and tolerances per ANSI Y14.5M, 1985. 2. Controlling Dimension: Inches 3. Pin 3 is the cathode (Unidirectional Only). 4. Dimensions are exclusive of mold flash and metal burrs. Marking Codes Part Number WM02P30M Marking Code 2301 Package Information Qty：3k/Reel CONTACT INFORMATION No.1001, Shiwan (7) Road, Pudong District, Shanghai, P.R.China.201207 Tel: 86-21-68969993 Fax: 86-21-50757680 Email: market@way-on.com WAYON website: http://www.way-on.com For additional information, please contact your local Sales Representative. ® is registered trademark of Wayon Corporation. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. Rev.E,2021 www.way-on.com 5/5