ShenZhen HanKingYuan Electronic Co.,Ltd
KYL3401
30V P-Channel Mosfet
SOT-23-3L
FEATURES
● RDS(ON) ≤ 60mΩ( 48mΩ Typ.)
@VGS=-10V
● RDS(ON) ≤ 78mΩ( 57mΩ Typ.)
@VGS=-4.5V
1. GATE
● RDS(ON) ≤ 112mΩ( 77mΩ Typ.)
@VGS=-2.5V
3. DRAIN
2. SOURCE
APPLICATIONS
● Load Switch
● PWM Applications
● Power Management
MARKING
P-CHANNEL MOSFET
3401X
Other marks: "X1YV
17
X: Date Code
"
MAXIMUM RATINGS (Ta=25°C unless otherwise noted)
Symbol
Parameter
Max.
Units
VDSS
Drain-Source Voltage
-30
V
VGSS
Gate-Source Voltage
±12
V
-4.2
-2.7
A
A
-30
A
Ta= 25℃
Ta= 100℃
ID
Continuous Drain Current
IDM
Pulsed Drain Current
PD
Power Dissipation
1.7
W
Thermal Resistance, Junction to Ambient
76.2
℃/W
-55 to +150
℃
RθJA
TJ,TSTG
note1
Operating and Storage Temperature Range
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ShenZhen HanKingYuan Electronic Co.,Ltd
KYL3400
MOSFET ELECTRICAL CHARACTERISTICS Ta=25 °C unless otherwise specified
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristic
V(BR)DSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250μA
-30
-
-
V
IDSS
Zero Gate Voltage Drain Current
VDS=-30V, VGS=0V,
-
-
-1.0
μA
IGSS
Gate to Body Leakage Current
VDS=0V, VGS= ±12V
-
-
±100
nA
VDS=VGS, ID=-250μA
-0.6
-0.9
-1.3
V
VGS= -10V, ID= -4A
-
48
60
VGS= -4.5V, ID= -3A
-
57
78
VGS= -2.5V, ID= -1A
-
77
112
-
880
-
pF
-
105
-
pF
-
65
-
pF
-
8.5
-
nC
-
1.8
-
nC
-
2.7
-
nC
-
7
-
ns
-
3
-
ns
-
20
-
ns
-
12
-
ns
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
on-Resistance note2
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain(“Miller”) Charge
VDS= -15V, VGS=0V,
f=1.0MHz
VDS= -15V, ID= -4.2A,
VGS= -10V
Switching Characteristics
td(on)
Turn-on Delay Time
tr
Turn-on Rise Time
td(off)
Turn-off Delay Time
tf
VDD= -15V, ID= -1A,
VGS= -10V, RGEN=2.5Ω
Turn-off Fall Time
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain to Source Diode
Forward Current
-
-
-4.2
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-30
A
VSD
Drain to Source Diode
Forward Voltage
-
-0.8
-1.2
V
VGS=0V, IS=-4.2A
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
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ShenZhen HanKingYuan Electronic Co.,Ltd
KYL3400
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 2: Typical Transfer Characteristics
Figure1: Output Characteristics
-ID (A)
25
25
10V
-ID (A)
TA=-55℃
4.5V
20
20
25℃
15
15
125℃
2.5V
10
10
5
5
2
4
-V GS (V)
V GS=1.5V
-V DS (V)
0
0
6
8
10
1.0
1.5
2.0
2.5
Figure 4: Body Diode Characteristics
Figure 3:On-resistance vs. Drain Current
100
0
0 .5
R DS(ON) (mΩ)
-IS (A)
10
V GS =-2.5V
80
TJ=150℃
VGS =-4.5V
60
40
TJ=-50℃
TJ=-25℃
1
V GS =-10V
20
-ID(A)
0
0
1
2
3
4
5
Figure 5: Gate Charge Characteristics
0.1
0.0
0.4
VSD(V)
0.6
0.8
1.0
1.2
1.4
Figure 6: Capacitance Characteristics
-V GS (V)
10
0.2
C(pF)
VDS =-15V
ID=-4.2A
8
Ciss
103
6
4
Coss
102
Crss
2
0
0
Q g(nC)
2
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4
6
8
10
101
0
-V DS (V)
5
10
15
20
25
30
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ShenZhen HanKingYuan Electronic Co.,Ltd
KYL3400
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
Figure 7: Normalized Breakdown Voltage vs.
Junction Temperature
Figure 8: Normalized on Resistance vs.
Junction Temperature
RDS(on)
VBR(DSS)
2.5
1.3
1.2
2.0
1.1
1.5
1.0
1.0
0.9
Tj (℃)
0
-100
-50
0
50
100
150
200
Figure 9: Maximum Safe Operating Area
Tj (℃ )
-50
0
50
100
150
200
Figure 10: Maximum Continuous Drain Current
vs. Ambient Temperature
-ID(A)
102
0.5
-100
5
-ID(A)
4
1
10
10μs
3
100μs
2
Limited by RDS(on)
0
10
1ms
TA=25℃
Single pulse
10-1
0.1
1
1
DC
-VDS (V)
10
0
100
0
25
50
T A ( ℃)
75
100
125
150
Figure.11: Maximum Effective Transient
Thermal Impedance, Junction-to-Ambient
102
ZthJ-A(℃ /W)
101
100
PDM
D=0.5
t1
D=0.2
D=0.1
t2
D=0.05
D=0.02
D=0.01
Notes:
Single pulse 1.Duty factor D=t1/t2
2.Peak TJ=P DM*ZthJA+TA
TP(s)
10-1
10-2 -4
10
10-3
10-2
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10-1
100
101
102
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ShenZhen HanKingYuan Electronic Co.,Ltd
KYL3400
SOT-23-3L PACKAGE OUTLINE DRAWING
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
1.050
1.250
0.041
0.049
A1
0.000
0.100
0.000
0.004
A2
1.050
1.150
0.041
0.045
b
0.300
0.400
0.012
0.016
c
0.100
0.200
0.004
0.008
D
2.820
3.020
0.111
0.119
E
1.500
1.700
0.059
0.067
E1
2.650
2.950
0.104
e
e1
0.950 TYP.
1.800
L
L1
θ
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2.000
0.071
0.700 REF.
0.300
0°
0.116
0.037 TYP.
0.079
0.028 REF.
0.600
8°
0.012
0°
0.024
8°
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