KY2305A

ShenZhen HanKingYuan Electronic Co.,Ltd KY2305A -20V P-Channel Mosfet FEATURES SOT-23 ● RDS(ON) ≤ 45mΩ( 35mΩ Typ.) @VGS=-4.5V ● RDS(ON) ≤ 70mΩ( 38mΩ Typ.) @VGS=-2.5V ● RDS(ON) ≤ 90mΩ( 50mΩ Typ.) @VGS=-1.8V APPLICATIONS ● Load Switch for Portable Devices ● DC/DC Converter MARKING P-CHANNEL MOSFET S5 Other marks: "2305 " or " S5B " Maximum ratings (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage -20 VGS Gate-Source Voltage ±12 ID Continuous Drain Current -4.1 IDM Pulsed Drain Current -16 PD Maximum Power Dissipation 0.83 W Thermal Resistance from Junction to Ambient(t ≤5s) 150 ℃/W TJ Junction Temperature 150 Tstg Storage Temperature -55 ~+150 RθJA www.scr-ky.com V A ℃ 1／6 ShenZhen HanKingYuan Electronic Co.,Ltd KY2305A MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Symbol Parameter Test Condition Min Typ Max Units Static V(BR)DSS Drain-source breakdown voltage VGS = 0V, ID =-250µA -20 -21.5 VGS(th) Gate-source threshold voltage VDS =VGS, ID =-250µA -0.4 -0.7 IGSS Gate-source leakage VDS =0V, VGS =±10V ±100 nA IDSS Zero gate voltage drain current VDS =-16V, VGS =0V -1 µA RDS(on) VSD Drain-source on-state resistance note1 Body diode voltage -1 VGS =-4.5V, ID =-3.5A 35 45 VGS =-2.5V, ID =-3A 38 70 VGS =-1.8V, ID =-2A 50 90 IS=-3.3A -0.9 -1.2 V mΩ V Dynamicnote2 Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge td(on) Turn-on delay time tr Rise time td(off) tf Turn-off delay time Fall time 740 VDS =-4V,VGS =0V,f =1MHz pF 290 190 VDS=-4V,VGS=-2.5V ID=-4.1A VDS=-4V, RL=1.2Ω, ID =-3.3A, VGEN=-4.5V,RG=1Ω 4.5 9 nC 1.2 1.6 13 20 35 53 32 48 10 20 nS Notes: 1. Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. 2 . Guaranteed by design, not subject to production testing. www.scr-ky.com 2／6 ShenZhen HanKingYuan Electronic Co.,Ltd KY2305A Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Rdson-Drain Current Figure4. Typical Source-Drain Diode Forward Voltage Figure5. Capacitance Characteristics Figure6. Gate Charge www.scr-ky.com 3／6 ShenZhen HanKingYuan Electronic Co.,Ltd KY2305A Typical Performance Characteristics (cont.) Figure7. Normalized Breakdown Voltage vs. Temperature Figure9. Safe Operation Area www.scr-ky.com Figure8. Normalized on Resistance vs. Temperature Figure10. Drain Current vs. Case Temperature 4／6 ShenZhen HanKingYuan Electronic Co.,Ltd KY2305A SOT-23 Package Outline Dimensions Symbol Dimensions In Millimeters Min Max Dimensions In Inches Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 2.000 0.071 e e1 0.950 TYP 1.800 L 0.037 TYP 0.550 REF 0.022 REF L1 0.300 0.500 0.012 θ 0° 8° 0° www.scr-ky.com 0.079 0.020 8° 5／6 ShenZhen HanKingYuan Electronic Co.,Ltd KY2305A SOT-23 Embossed Carrier Tape www.scr-ky.com 6／6